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Author Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. doi  openurl
  Title Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz Type Journal Article
  Year 1999 Publication (down) Supercond. Sci. Technol. Abbreviated Journal  
  Volume 12 Issue 11 Pages 748-750  
  Keywords NbN HEB mixers  
  Abstract We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).  
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  Notes Approved no  
  Call Number Serial 298  
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Author Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. url  doi
openurl 
  Title A fast infrared detector based on patterned YBCO thin film Type Journal Article
  Year 1994 Publication (down) Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 7 Issue 5 Pages 321-323  
  Keywords YBCO HTS detector  
  Abstract Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1646  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state Type Journal Article
  Year 1990 Publication (down) Sov. Supercond. Abbreviated Journal Sov. Supercond.  
  Volume 3 Issue 10 Pages 1582-1597  
  Keywords HEB mixers  
  Abstract  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 240  
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. url  openurl
  Title Germanium hot-electron narrow-band detector Type Journal Article
  Year 1971 Publication (down) Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics  
  Volume 16 Issue 8 Pages 1346  
  Keywords Ge HEB detectors  
  Abstract  
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  Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1741  
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Author Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Limiting characteristic of fast superconducting bolometers Type Journal Article
  Year 1989 Publication (down) Sov. Phys.-Tech. Phys. Abbreviated Journal Sov. Phys.-Tech. Phys.  
  Volume 34 Issue Pages 195-199  
  Keywords HEB  
  Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.  
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  Notes О предельных характеристиках быстродействующих серхпроводниковых болометров Approved no  
  Call Number Serial 237  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Observation of free carrier resonances in p-type germanium at submillimeter wavelengths Type Journal Article
  Year 1978 Publication (down) Sov. Phys. Solid State Abbreviated Journal Sov. Phys. Solid State  
  Volume 20 Issue 4 Pages 573-579  
  Keywords p-Ge, free carriers, resonances  
  Abstract The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.  
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  Notes Approved no  
  Call Number Serial 1721  
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Author Gershenzon, E. M.; Goltsman, G. N. url  openurl
  Title Zeeman effect in excited-states of donors in germanium Type Journal Article
  Year 1972 Publication (down) Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 6 Issue 3 Pages 509  
  Keywords Ge, donors, Zeeman effect  
  Abstract  
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  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1737  
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. url  openurl
  Title Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
  Year 1978 Publication (down) Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 11 Issue 12 Pages 1395-1397  
  Keywords InSb, spectrum of donors, strong magnetic field  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1725  
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication (down) Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords GaAs, excited donor states  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1733  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
  Year 1990 Publication (down) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 70 Issue 3 Pages 505-511  
  Keywords Nb films  
  Abstract A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.		  
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  Notes Approved no  
  Call Number Serial 241  
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