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Pothier, H.; Guéron, S.; Birge, Norman O.; Esteve, D.; Devoret, M. H. |
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Energy distribution function of quasiparticles in mesoscopic wires |
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1997 |
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Phys. Rev. Lett. |
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79 |
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18 |
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3490-3493 |
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tunnel probe, metallic nanowire, diffusive wire, diffusive nanowire |
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We have measured with a tunnel probe the energy distribution function of Landau quasiparticles in metallic diffusive wires connected to two reservoir electrodes, with an applied bias voltage. The distribution function in the middle of a 1.5-μm-long wire resembles the half sum of the Fermi distributions of the reservoirs. The distribution functions in 5-μm-long wires are more rounded, due to interactions between quasiparticles during the longer diffusion time across the wire. From the scaling of the data with the bias voltage, we find that the scattering rate between two quasiparticles varies as <c9><203a>–2, where <c9><203a> is the energy transferred. |
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921 |
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Anthore, A.; Pothier, H.; Esteve, D. |
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Title |
Density of states in a superconductor carrying a supercurrent |
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Journal Article |
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2003 |
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Phys. Rev. Lett. |
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Phys. Rev. Lett. |
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Volume |
90 |
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12 |
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127001 (1 to 4) |
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Keywords |
Usadel, superconducting nanowire |
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We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magnetic field. |
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Recommended by Klapwijk |
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924 |
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Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. |
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Title |
Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses |
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Journal Article |
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2013 |
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Phys. Rev. Lett. |
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Phys. Rev. Lett. |
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110 |
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26 |
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267003 (1 to 5) |
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NbN thin films, energy gap |
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Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. |
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Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany |
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0031-9007 |
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PMID:23848912 |
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1370 |
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Sergeev, A.; Mitin, V. |
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Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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2000 |
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Phys. Rev. B. |
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Phys. Rev. B. |
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61 |
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9 |
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6041-6047 |
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disordered conductors, scattering potential, electron-phonon interaction |
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Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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1996 |
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Phys. Rev. B Condens. Matter. |
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Phys. Rev. B Condens. Matter. |
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53 |
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12 |
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R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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