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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Journal Article |
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Year |
1987 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
46 |
Issue |
5 |
Pages |
237-238 |
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Keywords |
YBCO HTS detectors |
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For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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1703 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
Type |
Journal Article |
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Year |
1987 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
46 |
Issue |
6 |
Pages |
285-287 |
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Keywords |
YBCO HTS HEB |
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Abstract |
For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
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1972 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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16 |
Issue |
4 |
Pages |
161-162 |
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Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Heating of quasiparticles in a superconducting film in the resistive state |
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Journal Article |
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Year |
1981 |
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JETP Lett. |
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JETP Lett. |
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Volume |
34 |
Issue |
5 |
Pages |
268-271 |
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1716 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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Journal Article |
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Year |
1982 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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36 |
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7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
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Year |
1981 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
33 |
Issue |
11 |
Pages |
574 |
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Keywords |
Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
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Year |
1977 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
25 |
Issue |
12 |
Pages |
539-543 |
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Ge, shallow impurities, excited states |
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1726 |
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Author |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
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Year |
1976 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
24 |
Issue |
3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy spectrum of free excitons in germanium |
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Journal Article |
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Year |
1973 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
18 |
Issue |
3 |
Pages |
93 |
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Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Journal Article |
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1971 |
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JETP Lett. |
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JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
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1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
2 |
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63-65 |
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Keywords |
Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
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1971 |
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JETP Lett. |
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JETP Lett. |
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Volume |
14 |
Issue |
6 |
Pages |
241 |
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Keywords |
Ge, gamma irradiation, defects, impurities |
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1742 |
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Author |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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73 |
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1 |
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44-47 |
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uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
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1975 |
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JETP Lett. |
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JETP Lett. |
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22 |
Issue |
4 |
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95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
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Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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1995 |
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JETP |
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JETP |
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80 |
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5 |
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960-964 |
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The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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