Abstract: We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance.

Abstract: Heating effects in both long and short superconducting thin-<ef><ac><81>lm rnicrobridges are described and analyzed. Except near T(c), at low voltages where superconducting quantum processes occur, all of our experimental dc I-V characteristics can be satisfactorily understood on the basis of a simple model of a localized normal hotspot maintained by Joule heating. We consider approximations appropriate to the cases of long bridges, short bridges, and bridges coupled to microwave radiation. The analysis leads to analytic expressions for the I-V characteristics which agree well with the experimental data. We show that the formation of such a hotspot is the dominant cause of the hysteresis observed in the I-V characteristics at low temperatures. We also show that the growth of such a hotspot imposes a high-voltage limit on the ac Josephson effect in these devices, and we compare the importance of such heating effects at high voltages in various types of superconducting weak links.