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Codreanu, Iulian; Boreman, Glenn D. |
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Title |
Infrared microstrip dipole antennas |
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2001 |
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Microwave and Optical Technology Letters |
Abbreviated Journal |
Microw Opt Technol Lett |
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29 |
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6 |
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381-383 |
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Keywords |
optical antennas |
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Abstract 10.1002/mop.1184.abs We report on the successful use of niobium microbolometers coupled to microstrip dipole antennas for the detection of midinfrared radiation. Measurements of the detector response versus antenna length performed at the 10.6 μm wavelength allowed us to identify the first three current-wave resonances along the antenna arms. The detector response was also measured as a function of the radiation wavelength in the 911 μm spectral domain. Excellent agreement between the experimental results and finite-difference time-domain (FDTD) predictions was obtained. |
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RPLAB @ gujma @ |
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738 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
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Year |
2001 |
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Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
74 |
Issue |
9 |
Pages |
474-479 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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Year |
2001 |
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Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
73 |
Issue |
1 |
Pages |
44-47 |
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Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
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Title |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
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Journal Article |
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Year |
2001 |
Publication |
J. Vac. Sci. Technol. B |
Abbreviated Journal |
J. Vac. Sci. Technol. B |
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Volume |
19 |
Issue |
6 |
Pages |
2766-2769 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. |
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0734211X |
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1542 |
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Van Rudd, J.; Johnson, Jon L.; Mittleman, Daniel M. |
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Title |
Cross-polarized angular emission patterns from lens-coupled terahertz antennas |
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Journal Article |
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Year |
2001 |
Publication |
J. Opt. Soc. Am. B |
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18 |
Issue |
10 |
Pages |
1524 |
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0740-3224 |
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475 |
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Kasparek, W; Fernandez, A.; Hollmann, F; Wacker, R. |
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Measurements of ohmic losses of metallic reflectors at 140 GHz using a 3-mirror resonator technique |
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Journal Article |
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2001 |
Publication |
Int. J. Infrared and Millimeter Waves |
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22 |
Issue |
11 |
Pages |
1695-1707 |
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Keywords |
mirror, reflection index, emissivity, Fabry-Perot interferometer, subterahertz, subTHz |
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Abstract |
The reflectivity of metallic mirrors in the millimeter wave region does not only depend on the material, but also on the structure and roughness of the surface. We have performed measurements of the reflectivity of various plane and grooved metallic and graphite samples at 140 GHz. The technique is based on the comparison of the quality factor of a 2-mirror reference resonator with the quality factor of a 3-mirror resonator which has identical dimensions and includes the mirror to be tested. After a brief presentation of the theory, the set-up is described and the reflection loss for various aluminium and copper mirrors as well as vacuum compatible materials for applications in thermonuclear fusion experiments are presented and discussed. |
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581 |
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Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
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Title |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
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Journal Article |
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Year |
2001 |
Publication |
Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
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42 |
Issue |
1 |
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41-47 |
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Keywords |
NbN HEB mixers, anti-reflection coating |
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Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz. |
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1350-4495 |
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1548 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
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Title |
NbN hot electron bolometric mixers for terahertz receivers |
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Journal Article |
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2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
11 |
Issue |
1 |
Pages |
962-965 |
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NbN HEB mixers |
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Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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Shitov, S. V.; Levitchev, M.; Veretennikov, A. V.; Koshelets, V. P.; Prokopenko, G. V.; Filippenko, L. V.; Ermakov, A. B.; Shtanyuk, A. M.; Kohlstedt, H.; Ustinov, A. V. |
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Superconducting integrated receiver as 400-600 GHz tester for coolable devices |
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2001 |
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IEEE Trans. Appl. Supercond. |
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11 |
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1 |
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832-835 |
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RPLAB @ s @ sis_Shitov_2001 |
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313 |
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Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. |
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Fabrication and properties of an ultrafast NbN hot-electron single-photon detector |
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2001 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
11 |
Issue |
1 |
Pages |
574-577 |
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NbN SSPD, SNSPD |
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A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. |
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