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Author Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. doi  openurl
  Title Characterization of MoSi superconducting single-photon detectors in the magnetic field Type Journal Article
  Year 2015 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2200504 (1 to 4)  
  Keywords SSPD, SNSPD  
  Abstract We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.  
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  Notes Approved no  
  Call Number RPLAB @ akorneev @ KorneevIEEE2015 Serial 991  
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Author Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
  Year 2015 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 1-4  
  Keywords TiN MKID  
  Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1296  
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Author Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. url  doi
openurl 
  Title A microwave-operated hot-electron-bolometric power detector for terahertz radiation Type Journal Article
  Year 2015 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2300604 (1 to 4)  
  Keywords NbN HEB mixer  
  Abstract A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of  5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of  15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.  
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  Series Volume Series Issue Edition  
  ISSN 1558-2515 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1354  
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Author Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. url  doi
openurl 
  Title New generation of superconducting nanowire single-photon detectors Type Conference Article
  Year 2015 Publication (down) EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences  
  Volume 103 Issue Pages 01006 (1 to 2)  
  Keywords SSPD, SNSPD  
  Abstract We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.  
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  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1349  
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Author Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. url  doi
openurl 
  Title Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs Type Conference Article
  Year 2015 Publication (down) EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences  
  Volume 103 Issue Pages 10004 (1 to 2)  
  Keywords SSPD, SNSPD  
  Abstract We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1351  
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