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Author |
Title |
Year |
Publication |
DOI |
Links |
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Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S. |
Submillimeter mixer based on YBa2Cu3O7-x thin film |
2004 |
Proc. 1-st conf. Fundamental problems of high temperature superconductivity |
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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
2001 |
Physics of Vibrations |
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Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
Thermal properties of NbN single-photon detectors |
2018 |
Phys. Rev. Applied |
10.1103/PhysRevApplied.10.064063 |
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Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Rosental, V. A.; Smirnov, K. V.; Goltsman, G. N.; Volkov, O. Y.; Dyuzhikov, I. N.; Galiev, R. R.; Ponomarev, D. S.; Khabibullin, R. A. |
Time-resolved measurements of light–current characteristic and mode competition in pulsed THz quantum cascade laser |
2021 |
Optical Engineering |
10.1117/1.Oe.60.8.082019 |
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Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N. |
Superconducting detector for visible and near-infrared quantum emitters [Invited] |
2017 |
Opt. Mater. Express |
10.1364/OME.7.000513 |
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Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. |
Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion |
2019 |
Opt. Lett. |
10.1364/OL.44.001198 |
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Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Gol'tsman, G. N. |
Infrared and terahertz detectors on basis of superconducting nanostructures |
2010 |
Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. |
10.1109/CRMICO.2010.5632997 |
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Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
10.1134/1.1434290 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
10.1134/1.568271 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
10.1134/1.567211 |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
Superconducting detector of IR single-photons based on thin WSi films |
2016 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/737/1/012032 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. |
Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films |
2018 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1124/5/051030 |
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Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. |
Electron diffusivity measurements of VN superconducting single-photon detectors |
2018 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/1124/5/051032 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V. |
Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range |
2017 |
J. Phys.: Conf. Ser. |
10.1088/1742-6596/917/6/062037 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
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