Records |
Author |
Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Title |
Noise equivalent power and dynamic range of NBN hot-electron bolometers |
Type |
Conference Article |
Year |
2011 |
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Proc. MLPLIT |
Abbreviated Journal |
Proc. MLPLIT |
Volume |
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Issue |
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Pages |
146-148 |
Keywords |
NbN HEB |
Abstract |
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Address |
Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
Notes |
September 23-28, 2011 |
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1386 |
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Kardashev, N. S.; Andreyanov, V. V.; Buyakas, V. I.; Vinogradov, I. S.; Gvamichava, A. S.; Kotik, A. I.; Kurt, V. G.; Lazareva, G. S.; Mironova, E. N.; Myshonkova, N. V.; Slysh, V. I.; Trubnikov, A. G.; Troitskiy, V. F.; Puryaev, D. T.; Usyukin, V. I. |
Title |
The Millimetron project |
Type |
Conference Article |
Year |
2000 |
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Proc. Lebedev Phys. Institute |
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228 |
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RPLAB @ s @ MILLIMETRON_first |
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308 |
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Author |
Tonguz, O.K.; Hwang, B. |
Title |
Noise performance of AFC loops in optical heterodyne receivers |
Type |
Conference Article |
Year |
1993 |
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Proc. Lasers and Electro-Optics Society Annual Meeting |
Abbreviated Journal |
Proc. LEOS |
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Pages |
361-362 |
Keywords |
optical mixing |
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San Jose, CA, USA |
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510 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
Year |
2019 |
Publication ![sorted by Publication field, descending order (down)](img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
Volume |
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Pages |
369-371 |
Keywords |
silicon detector, quantum dot, IR, surface states |
Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Author |
Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н. |
Title |
Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния |
Type |
Conference Article |
Year |
2019 |
Publication ![sorted by Publication field, descending order (down)](img/sort_desc.gif) |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
Volume |
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Pages |
201-203 |
Keywords |
integrated optics, silicon nitride, focusing grating coupler |
Abstract |
В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния. |
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Russian |
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Duplicated as 1188 |
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1282 |
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