Tretyakov, I., Svyatodukh, S., Chumakova, A., Perepelitsa, A., Kaurova, N., Shurakov, A., et al. (2019). Room temperature silicon detector for IR range coated with Ag2S quantum dots. In IRMMW-THz.
Abstract: A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Gol’tsman, G. N., Vaks, V. L., Pripolzin, S. I., et al. (2011). Heterodyne source of THz range based on semiconductor superlattice multiplier. In IRMMW-THz (pp. 1–2).
Abstract: We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state.
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Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Antipov, A. V., Seleznev, V. A., Vakhtomin, Y. B., Morozov, P. V., Vasilev, D. D., Malevannaya, E. I., et al. (2020). Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012011 (1 to 5)).
Abstract: Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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Rath, P., Vetter, A., Kovalyuk, V., Ferrari, S., Kahl, O., Nebel, C., et al. (2016). Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps. In J. - E. Broquin, & G. N. Conti (Eds.), Integrated Optics: Devices, Mat. Technol. XX (Vol. 9750, pp. 135–142). Spie.
Abstract: We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).
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Marsili, F., Bitauld, D., Fiore, A., Gaggero, A., Mattioli, F., Leoni, R., et al. (2010). Photon-number-resolution at telecom wavelength with superconducting nanowires. IntechOpen [DOI:10.5772/6920]. Retrieved July 3, 2024, from http://dx.doi.org/10.5772/6920.
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Kroug, M., Yagoubov, P., Gol'tsman, G., & Kollberg, E. (1997). NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In Inst. Phys. Conf. Ser. (Vol. 1, pp. 405–408). Bristol.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. W., et al. (1999). Hot electron bolometric mixers based on NbN films deposited on MgO substrates. In Inst. Phys. Conf. Ser. (Vol. 167, pp. 687–690). Barcelona, Spain.
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Schubert, J., Semenov, A., Hübers, H. - W., Gol'tsman, G., Schwaab, G., Voronov, B., et al. (1999). Broad-band terahertz NbN hot-electron bolometric mixer. In Inst. Phys. Conf. (Vol. 167, pp. 663–666).
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Lusche, R., Semenov, A., Huebers, H. - W., Ilin, K., Siegel, M., Korneeva, Y., et al. (2013). Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors. In INIS (Vol. 46, pp. 1–3).
Abstract: The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors.
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