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Author Beck, Matthias; Leiderer, Paul; Kabanov, Viktor V.; Gol'tsman, Gregory; Helm, Manfred; Demsar, Jure
Title Energy-gap dynamics of a superconductor NbN studied by time-resolved terahertz spectroscopy Type Abstract
Year 2012 Publication (down) INIS Abbreviated Journal INIS
Volume 45 Issue 12 Pages 1-3
Keywords NbN energy gap
Abstract Using time-resolved terahertz (THz) spectroscopy we performed direct studies of the photoinduced suppression and recovery of the SC gap in a conventional SC NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the important microscopic constants: the Cooper pair-breaking rate via phonon absorption and the bare quasiparticle recombination rate. From the latter we were able to extract the dimensionless electron-phonon coupling constant, λ=1.1±0.1, in excellent agreement with theoretical estimates. The technique also allowed us to determine the absorbed energy required to suppress SC, which in NbN equals the thermodynamic condensation energy (in cuprates the two differ by an order of magnitude). Finally, we present the first studies of dynamics following resonant excitation with intense narrow band THz pulses tuned to above and below the superconducting gap. These suggest an additional process, particularly pronounced near Tc, that could be attributed to amplification of SC via effective quasiparticle cooling.
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Area Expedition Conference
Notes Approved no
Call Number Serial 1383
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Author Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R.
Title A method of optimization of the NbN superconducting single-photon detector Type Miscellaneous
Year 2004 Publication (down) INIS Abbreviated Journal INIS
Volume 36 Issue 27 Pages 1-2
Keywords NbN SSPD, SNSPD
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Area Expedition Conference 5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION
Notes Reference num. 36060124 Approved no
Call Number Serial 1485
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Author Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R.
Title NbN superconducting single-photon detectors coupled with a communication fiber Type Miscellaneous
Year 2004 Publication (down) INIS Abbreviated Journal INIS
Volume 37 Issue 2 Pages 1-2
Keywords NbN SSPD, SNSPD
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Address Stare Jablonki, Poland
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Area Expedition Conference 8-th Electron Technology Conference ELTE
Notes Approved no
Call Number Serial 1486
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Author Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory
Title Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption Type Conference Article
Year 2017 Publication (down) IEEE Transactions on Applied Superconductivity Abbreviated Journal IEEE Transactions on Applied Superconductiv
Volume 27 Issue 4 Pages 5
Keywords Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors
Abstract In superconducting single-photon detectors SSPD

the efficiency of local suppression of superconductivity and hotspot

formation is controlled by diffusivity and electron-phonon

interaction time. Here we selected a material, 3.6-nm-thick MoNx

film, which features diffusivity close to those of NbN traditionally

used for SSPD fabrication, but with electron-phonon interaction

time an order of magnitude larger. In MoNx detectors we study

the dependence of detection efficiency on bias current, photon

energy, and strip width and compare it with NbN SSPD. We

observe non-linear current-energy dependence in MoNx SSPD

and more pronounced plateaus in dependences of detection

efficiency on bias current which we attribute to longer electronphonon

interaction time.
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1114
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Author Mehdi, I.; Gol'tsman, G.; Putz, P.
Title Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) Type Miscellaneous
Year 2015 Publication (down) IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.
Volume 5 Issue 1 Pages 14-15
Keywords
Abstract THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.

In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).

You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml

Yours sincerely
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1353
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Author Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene
Title Superconductive hot-electron bolometer mixer receiver for 800 GHz operation Type Miscellaneous
Year 2000 Publication (down) IEEE Trans. Microwave Theory and Techniques Abbreviated Journal IEEE Trans. Microwave Theory and Techniques
Volume 48 Issue 4 Pages 683-689
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Abstract
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Notes Approved no
Call Number RPLAB @ s @ Kawamura_superconductivehot-electron Serial 424
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type Conference Article
Year 2017 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 6
Keywords Multi-pixel, HEB, silicon-on-insulator, horn array
Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,
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Area Expedition Conference
Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1111
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Author Shurakov, Alexander; Tong, Edward; Blundell, Raymond; Gol'tsman, Gregory
Title Microwave stabilization of HEB mixer by a microchip controller Type Conference Article
Year 2012 Publication (down) IEEE MTT-S international microwave symposium digest Abbreviated Journal
Volume Issue Pages 1-3
Keywords HEB mixer stability, microwave injection, Allan variance, Allan time
Abstract The stability of a Hot Electron Bolometer (HEB) mixer can be improved by the use of microwave injection. In this article we report a refinement of this approach. We introduce a microchip controller to facilitate the implementation of the stabilization scheme, and demonstrate that the feedback loop effectively suppresses drifts in the HEB bias current, leading to an improvement in the receiver stability. The measured Allan time of the mixer's IF output power is increased to > 10 s.
Address Montreal, QC, Canada
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 857
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Author Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G.
Title A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator Type Conference Article
Year 2003 Publication (down) IEEE MTT-S Int. Microwave Symp. Digest Abbreviated Journal IEEE MTT-S Int. Microwave Symp. Digest
Volume 2 Issue Pages 751-754
Keywords waveguide NbN HEB mixers
Abstract We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W.
Address Philadelphia, PA, USA
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1516
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Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory
Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
Year 2020 Publication (down) Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.
Volume Issue Pages
Keywords single layer graphene, SLG, CVD, plasmons, FET
Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.
Address Grenoble, France
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Area Expedition Conference Graphene and 2dm Virtual Conference & Expo
Notes Approved no
Call Number Serial 1743
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