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Author Минаева, Ольга Вячеславовна
Title Быстродействующий однофотонный детектор на основе тонкой сверхпроводниковой пленки NbN Type Manuscript
Year 2009 Publication (down) М. МПГУ Abbreviated Journal
Volume Issue Pages
Keywords SSPD
Abstract
Address
Corporate Author Thesis Ph.D. thesis
Publisher Place of Publication Editor
Language russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 585
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Author Рябчун, С. А.
Title Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN Type Manuscript
Year 2009 Publication (down) М. МПГУ Abbreviated Journal
Volume Issue Pages 98
Keywords HEB, mixer, terahertz, THz, stability, Allan variance, conversion bandwidth, in-situ technique, Au contacts
Abstract
Address
Corporate Author Thesis Ph.D. thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 598
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Author Рябчун, С. А.; Третьяков, И. В.; Пентин, И. В; Каурова, Н. С.; Селезнев, В. А; Воронов, Б. М.; Финкель, М. И.; Масленников, С. Н.; Гольцман, Г. Н.
Title Малошумящий широкополосный терагерцовый смеситель на эффекте электронного разогрева в плёнке NbN Type Journal Article
Year 2009 Publication (down) Известия высших учебных заведений. Радиофизика Abbreviated Journal
Volume 52 Issue 8 Pages 641-648
Keywords HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel
Abstract Разработан и исследован смеситель на горячих электронах, изготовленный из двуслойной плёнки NbN-Au, осаждённой на кремневую подложку in situ. Двухполосная шумовая температура устройства составила 750 К на частоте 2.5 ТГц. Измерения эффективности преобразования для смесителя длиной 0.112 мкм вблизи температуры сверхпроводящего перехода показали полосу промежуточных частот около 6.5 ГГц. Эти результаты являются рекордными и были получены за счёт улучшения контактов между чувствительным элементом и спиральной антенной при замене технологического маршрута с нанесением слоёв NbN и Au в отдельных процессах на технологический процесс, в котором данные слои наносятся in situ без нарушения вакуума.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 600
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Author Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M.
Title CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument Type Journal Article
Year 2009 Publication (down) SPICA Abbreviated Journal SPICA
Volume Issue SPICA Workshop 2009 Pages
Keywords detectors; Infrared
Abstract We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 672
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Author Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N.
Title Low-noise wide-band hot-electron bolometer mixer based on an NbN film Type Journal Article
Year 2009 Publication (down) Radiophys. Quant. Electron. Abbreviated Journal
Volume 52 Issue 8 Pages 576-582
Keywords HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel
Abstract We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 599
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