Records |
Author |
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
Type |
Journal Article |
Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
Volume |
10 |
Issue |
5 |
Pages |
1-12 |
Keywords |
detector; quantum dots; short-wave infrared range; silicon |
Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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Author |
Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. |
Title |
On-Chip Single Plasmon Detection |
Type |
Journal Article |
Year |
2010 |
Publication |
Nano Letters |
Abbreviated Journal |
Nano Lett. |
Volume |
10 |
Issue |
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Pages |
661-664 |
Keywords |
optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics |
Abstract |
Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. |
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RPLAB @ akorneev @ |
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620 |
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Author |
Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
Title |
Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
Type |
Journal Article |
Year |
2014 |
Publication |
Laser Phys. Lett. |
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Volume |
11 |
Issue |
1 |
Pages |
015004 (1 to 4) |
Keywords |
HEB applications, HEB detector applications, short THz pulses detection |
Abstract |
We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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1076 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Journal Article |
Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
46 |
Issue |
5 |
Pages |
237-238 |
Keywords |
YBCO HTS detectors |
Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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no |
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1703 |
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Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Title |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
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Journal Article |
Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
Volume |
7 |
Issue |
4 |
Pages |
751-755 |
Keywords |
YBCO HTS detector, nonequilibrium response |
Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. |
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0896-1107 |
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no |
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Serial |
1636 |
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Author |
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Title |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
Type |
Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
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Pages |
012156 |
Keywords |
Shottky diode, THz, direct detector, multipixel camera |
Abstract |
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. |
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1742-6588 |
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1153 |
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Author |
Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
Title |
Development of control method for an optimal quantum receiver |
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Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
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Pages |
012126 |
Keywords |
Helstrom bound, SPD, single photon detector, below quantum limit |
Abstract |
We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver. |
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1742-6588 |
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no |
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1264 |
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Author |
Polyakova, M. I.; Florya, I. N.; Semenov, A. V.; Korneev, A. A.; Goltsman, G. N. |
Title |
Extracting hot-spot correlation length from SNSPD tomography data |
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Conference Article |
Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1410 |
Issue |
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Pages |
012166 (1 to 4) |
Keywords |
SSPD, SNSPD, quantum detector tomography, QDT |
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We present data of quantum detector tomography for the samples specifically optimized for this problem. Using this method, we take results of hot-spot correlation length of 17 ± 2 nm. |
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1742-6588 |
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no |
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1273 |
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Author |
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Title |
Towards to the development of THz detectors based on carbon nanostructures |
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Conference Article |
Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1092 |
Issue |
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Pages |
012039 (1 to 4) |
Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1742-6588 |
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no |
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1302 |
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Author |
Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. |
Title |
Attojoule energy resolution of direct detector based on hot electron bolometer |
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Conference Article |
Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
741 |
Issue |
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Pages |
012165 (1 to 5) |
Keywords |
NbN HEB detector |
Abstract |
We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. |
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IOP Publishing |
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Seliverstov_2016 |
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1337 |
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Author |
Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl |
Title |
Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors |
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Journal Article |
Year |
2009 |
Publication |
J. Modern Opt. |
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J. Modern Opt. |
Volume |
56 |
Issue |
2 |
Pages |
364-373 |
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PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency |
Abstract |
A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented. |
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RPLAB @ gujma @ |
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700 |
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Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
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Journal Article |
Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
Volume |
56 |
Issue |
2-3 |
Pages |
334-344 |
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PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
Abstract |
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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0950-0340 |
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RPLAB @ gujma @ |
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701 |
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Gordon, N. T.; Lees, D. J.; Bowen, G.; Phillips, T. S.; Haigh, M.; Jones, C. L.; Maxey, C. D.; Hipwood, L.; Catchpole, R. A. |
Title |
HgCdTe detectors operating above 200 K |
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Journal Article |
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2006 |
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J. Electron. Mater. |
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35 |
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6 |
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1140-1144 |
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HgCdTe detector |
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0361-5235 |
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467 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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Journal Article |
Year |
2015 |
Publication |
J. Appl. Phys. |
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J. Appl. Phys. |
Volume |
118 |
Issue |
19 |
Pages |
194303 |
Keywords |
terahertz detectors, asymmetric carbon nanotubes, CNT |
Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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no |
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1169 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films |
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Journal Article |
Year |
1994 |
Publication |
J. Appl. Phys. |
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J. Appl. Phys. |
Volume |
76 |
Issue |
3 |
Pages |
1902-1909 |
Keywords |
YBCO HTS HEB detector, nonequilibrium response |
Abstract |
Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response. |
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0021-8979 |
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1637 |
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