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Author |
Goltsman, G. |
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Title |
Simple method for stabilizing power of submillimetric spectrometer |
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Journal Article |
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Year |
1972 |
Publication  |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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1 |
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136 |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia |
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no |
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1738 |
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Author |
Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Picosecond response on optical-range emission in thin YBaCuO films |
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Journal Article |
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Year |
1991 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
17 |
Issue |
22 |
Pages |
6-10 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. |
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Russian |
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no |
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1684 |
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Author |
Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Prospects for using high-temperature superconductors to create electron bolometers |
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Journal Article |
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Year |
1989 |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
15 |
Issue |
14 |
Pages |
88-93 |
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Keywords |
HTS HEB |
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Russian |
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0320-0116 |
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Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров |
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1693 |
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Author |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
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Title |
Fast-response superconducting electron bolometer |
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Journal Article |
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Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Volume |
15 |
Issue |
3 |
Pages |
88-92 |
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Keywords |
Nb HEB |
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The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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1694 |
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Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
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Title |
Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
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Conference Article |
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Year |
2019 |
Publication |
PIERS-Spring |
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PIERS-Spring |
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745-751 |
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Keywords |
silicon photonics, TriPleX platform |
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In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array. |
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Call Number |
9017646 |
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1186 |
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Author |
Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N. |
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Title |
Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range |
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Journal Article |
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Year |
2010 |
Publication |
PIER B |
Abbreviated Journal |
PIER B |
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Volume |
25 |
Issue |
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Pages |
349-367 |
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Keywords |
complex permittivity, ore minerals |
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Abstract |
The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite. |
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RPLAB @ gujma @ |
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639 |
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Author |
Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
Type |
Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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Volume |
9 |
Issue |
4 |
Pages |
242-245 |
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Keywords |
NbN HEB mixers |
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1069-1227 |
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1550 |
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Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
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Title |
Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
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Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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9 |
Issue |
3 |
Pages |
205-210 |
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Keywords |
NbN HEB mixers |
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1069-1227 |
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1551 |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
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1976 |
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Physics of Semiconductors |
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Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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Journal Article |
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Year |
2019 |
Publication |
Phys. Status Solidi RRL |
Abbreviated Journal |
Phys. Status Solidi RRL |
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Volume |
13 |
Issue |
9 |
Pages |
1900187-(1-6) |
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Abstract |
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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1149 |
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