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Feresten, N. L., Thornton, J. A., Emmett, J., Lamichhane, P., Epstein, L., Kiesow, A., et al. (Eds.). (2011). Everything: Rocks and Minerals.
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Mitin, V., Antipov, A., Sergeev, A., Vagidov, N., Eason, D., & Strasser, G. (2011). Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers. Nanoscale res lett, 6(1), 6.
Abstract: Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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Antipov, A., Bell, M., Yasar, M., Mitin, V., Scharmach, W., Swihart, M., et al. (2011). Luminescence of colloidal CdSe/ZnS nanoparticles: high sensitivity to solvent phase transitions. Nan. Res. Lett., 6, 7.
Abstract: We investigate nanosecond photoluminescence processes in colloidal core/shell CdSe/ZnS nanoparticles dissolved in water and found strong sensitivity of luminescence to the solvent state. Several pronounced changes have been observed in the narrow temperature interval near the water melting point. First of all, the luminescence intensity substantially (approximately 50%) increases near the transition. In a large temperature scale, the energy peak of the photoluminescence decreases with temperature due to temperature dependence of the energy gap. Near the melting point, the peak shows N-type dependence with the maximal changes of approximately 30 meV. The line width increases with temperature and also shows N-type dependence near the melting point. The observed effects are associated with the reconstruction of ligands near the ice/water phase transition.
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Marsili, F., Najafi, F., Dauler, E., Bellei, F., Hu, X., Csete, M., et al. (2011). Single-photon detectors based on ultranarrow superconducting nanowires. Nano Lett., 11(5), 2048–2053.
Abstract: We report efficient single-photon detection (η = 20% at 1550 nm wavelength) with ultranarrow (20 and 30 nm wide) superconducting nanowires, which were shown to be more robust to constrictions and more responsive to 1550 nm wavelength photons than standard superconducting nanowire single-photon detectors, based on 90 nm wide nanowires. We also improved our understanding of the physics of superconducting nanowire avalanche photodetectors, which we used to increase the signal-to-noise ratio of ultranarrow-nanowire detectors by a factor of 4, thus relaxing the requirements on the read-out circuitry and making the devices suitable for a broader range of applications.
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Edlmayr, V., Harzer, T. P., Hoffmann, R., Kiener, D., Scheu, C., & Mitterer, C. (2011). Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A, 29(4), 8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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