Records |
Author |
Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
Title |
Nano-structured superconducting single-photon detectors |
Type |
Journal Article |
Year |
2004 |
Publication |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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Volume |
520 |
Issue |
1-3 |
Pages |
527-529 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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1495 |
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Hübers, Heinz-Wilhelm; Semenov, A.; Richter, H.; Smirnov, K.; Gol'tsman, G.; Voronov, B. |
Title |
Phonon cooled far-infrared hot electron bolometer mixer |
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Abstract |
Year |
2002 |
Publication |
NASA/ADS |
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NASA/ADS |
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NbN HEB mixers |
Abstract |
Heterodyne receivers for applications in astronomy need quantum-limited sensitivity. At frequencies above 1.4 THz superconducting hot electron bolometers (HEB) can be used to achieve this goal. We present results of the development of a quasi-optical phonon-cooled NbN HEB mixer for GREAT, the German heterodyne receiver for SOFIA. Different mixers with logarithmic spiral and double slot feed antennas have been investigated with respect to their noise temperature, conversion loss, linearity and beam pattern at several frequencies between 0.7 THz and 5.2 THz. At 2.5 THz a double sideband noise temperature of 2200 K was achieved. The conversion loss was 16 dB. The response of the mixer was linear up to 400 K load temperature. This performance was verified by measuring an emission line of methanol at 2.5 THz. The results demonstrate that the NbN HEB is very well suited as a mixer for FIR heterodyne receivers. |
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Monterey, CA |
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Far-IR, Sub-mm & MM Detector Technology Workshop, 1-3 April 2002 |
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id.37 |
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1534 |
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Author |
Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Gol'tsman, G. N. |
Title |
Infrared and terahertz detectors on basis of superconducting nanostructures |
Type |
Conference Article |
Year |
2010 |
Publication |
Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. |
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Pages |
823-824 |
Keywords |
SSPD, SNSPD, HEB |
Abstract |
Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena. |
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IEEE |
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RPLAB @ sasha @ smirnov2010infrared |
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1025 |
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Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
Type |
Journal Article |
Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
Keywords |
NbN SSPD, SNSPD, applications |
Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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0167-9317 |
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1511 |
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Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
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Conference Article |
Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
Volume |
384-3 |
Issue |
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Pages |
107-116 |
Keywords |
2DEG, AlGaAs/GaAs |
Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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no |
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1536 |
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Author |
Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K. |
Title |
Superconducting single-photon detectors made of ultra-thin VN films |
Type |
Conference Article |
Year |
2018 |
Publication |
KnE Energy |
Abbreviated Journal |
KnE Energy |
Volume |
3 |
Issue |
3 |
Pages |
83-89 |
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Abstract |
We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I |
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1230 |
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Author |
Gol’tsman, G. N.; Smirnov, K. V. |
Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
Volume |
74 |
Issue |
9 |
Pages |
474-479 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Author |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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Journal Article |
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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Journal Article |
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
64 |
Issue |
5 |
Pages |
404-409 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Smirnov, K.; Korneev, A.; Minaeva, O.; Divochiy, A.; Tarkhov, M.; Ryabchun, S.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol'tsman, G.; Polonsky, S. |
Title |
Ultrathin NbN film superconducting single-photon detector array |
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Conference Article |
Year |
2007 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
61 |
Issue |
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Pages |
1081-1085 |
Keywords |
SSPD array |
Abstract |
We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes. |
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1742-6588 |
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408 |
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