Korneev, A., Divochiy, A., Tarkhov, M., Minaeva, O., Seleznev, V., Kaurova, N., et al. (2008). New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving. In J. Phys.: Conf. Ser. (Vol. 97, 012307 (1 to 6)).
Abstract: We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing.
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Seleznev, V. A., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Zolotov, P. I., Vasil'ev, D. D., et al. (2016). Superconducting detector of IR single-photons based on thin WSi films. In J. Phys.: Conf. Ser. (Vol. 737, 012032).
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Moshkova, M., Morozov, P., Divochiy, A., Vakhtomin, Y., & Smirnov, K. (2019). Large active area superconducting single photon detector. In J. Phys.: Conf. Ser. (Vol. 1410, 012139).
Abstract: We present development of large active area superconducting single-photon detectors well coupled with standard 50 μm-core multi-mode fiber. The sensitive area of the SSPD is patterned using the photon-number-resolving design and occupies an area of 40×40 μm2. Using this approach, we have obtained excellent specifications: system detection efficiency of 47% measured using a 900 nm laser and low dark count rate of 100 cps. The main advantages of the approach presented are a very short dead time of the detector of 22 ns and FWHM jitter value of about 130 ps.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Lubenchenko, A. V., Morozov, P. V., Shurkaeva, I. V., et al. (2018). Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In J. Phys.: Conf. Ser. (Vol. 1124, 051030).
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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Romanov, N. R., Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., & Smirnov, K. V. (2018). Electron diffusivity measurements of VN superconducting single-photon detectors. In J. Phys.: Conf. Ser. (Vol. 1124, 051032).
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Seleznev, V. A., & Smirnov, K. V. (2017). Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In J. Phys.: Conf. Ser. (Vol. 917, 062037).
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Milostnaya, I., Korneev, A., Rubtsova, I., Seleznev, V., Minaeva, O., Chulkova, G., et al. (2006). Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength. In J. Phys.: Conf. Ser. (Vol. 43, pp. 1334–1337).
Abstract: We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications.
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Moshkova, M., Divochiy, A., Morozov, P., Vakhtomin, Y., Antipov, A., Zolotov, P., et al. (2019). High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range. J. Opt. Soc. Am. B, 36(3), B20.
Abstract: The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Goltsman, G., Korneev, A., Divochiy, A., Minaeva, O., Tarkhov, M., Kaurova, N., et al. (2009). Ultrafast superconducting single-photon detector. J. Modern Opt., 56(15), 1670–1680.
Abstract: The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.
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Słysz, W., Wegrzecki, M., Bar, J., Grabiec, P., Górska, M., Zwiller, V., et al. (2007). Fibre-coupled, single photon detector based on NbN superconducting nanostructures for quantum communications. J. Modern Opt., 54(2-3), 315–326.
Abstract: We present a novel, two-channel, single photon receiver based on two fibre-coupled, NbN, superconducting, single photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders and are known for ultrafast and efficient detection of visible-to-infrared photons. Coupling between the NbN detector and optical fibre was achieved using a micromechanical photoresist ring placed directly over the SSPD, holding the fibre in place. With this arrangement, we obtained coupling efficiencies up to ∼30%. Our experimental results showed that the best receiver had a near-infrared system quantum efficiency of 0.33% at 4.2 K. The quantum efficiency increased exponentially with the photon energy increase, reaching a few percent level for visible-light photons. The photoresponse pulses of our devices were limited by the meander high kinetic inductance and had the rise and fall times of approximately 250 ps and 5 ns, respectively. The receiver's timing jitter was in the 37 to 58 ps range, approximately 2 to 3 times larger than in our older free-space-coupled SSPDs. We stipulate that this timing jitter is in part due to optical fibre properties. Besides quantum communications, the two-detector arrangement should also find applications in quantum correlation experiments.
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Verevkin, A., Pearlman, A., Slysz, W., Zhang, J., Currie, M., Korneev, A., et al. (2004). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. J. Modern Opt., 51(9-10), 1447–1458.
Abstract: The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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Milostnaya, I., Korneev, A., Tarkhov, M., Divochiy, A., Minaeva, O., Seleznev, V., et al. (2008). Superconducting single photon nanowire detectors development for IR and THz applications. J. Low Temp. Phys., 151(1-2), 591–596.
Abstract: We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained.
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Rasulova, G. K., Pentin, I. V., Vakhtomin, Y. B., Smirnov, K. V., Khabibullin, R. A., Klimov, E. A., et al. (2020). Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime. J. Appl. Phys., 128(22), 224303 (1 to 11).
Abstract: The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
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Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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