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Kovaluyk, V., Lazarenko, P., Kozyukhin, S., An, P., Prokhodtsov, A., Goltsman, G., et al. (2019). Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In Proc. Amorphous and Nanostructured Chalcogenides (pp. 47–48). Technical University of Moldova.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Kooi, J. W., Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Dieleman, P., et al. (2007). IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys., 101(4), 044511.
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Risacher, C., Meledin, D., Belitsky, V., & Bergman, P. (2009). First 1.3 THz observations at the APEX telescope. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 54–61).
Abstract: The Atacama Pathfinder EXperiment (APEX) 12m telescope is operating on the Llano Chajnantor, Chile, since 2003 and a set of state of the art sub-millimeter receivers have been installed for frequencies spanning from 150 GHz to 1500 GHz. In 2008, a balanced 1.3 THz Hot Electron Bolometer (HEB) receiver was installed for the atmospheric window 1250-1380 GHz. This instrument is part of a 4-channel receiver cryostat with the other channels being 211-275 GHz, 275-370 GHz and 380-500 GHz Sideband Separating (SSB) SIS receivers. This paper presents the first observations obtained so far with the 1.3 THz band during its first months of operation. The sky measurements were taken during opportunistic commissioning and science verification phases, when the weather conditions were sufficiently good with a Precipitable Water Vapor (PWV) below 0.25 mm, which was the case only a few nights during these months. We present the first observations of the molecular transition CO J=(11-10) line on different sources such as Orion-FIR4, CW-Leo and SgrB2(M). We describe the many challenges and difficulties encountered for achieving successful THz observations from a large sub-millimeter ground-based telescope.
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Griffin, M. J., Abergel, A., Abreu, A., Ade, P. A. R., André, P., Augueres, J. - L., et al. (2010). The Herschel-SPIRE instrument and its in-flight performance. A&A, 518, 7.
Abstract: The Spectral and Photometric Imaging REceiver (SPIRE), is the Herschel Space Observatory`s submillimetre camera and spectrometer. It contains a three-band imaging photometer operating at 250, 350 and 500 μm, and an imaging Fourier-transform spectrometer (FTS) which covers simultaneously its whole operating range of 194-671 μm (447-1550 GHz). The SPIRE detectors are arrays of feedhorn-coupled bolometers cooled to 0.3 K. The photometer has a field of view of 4Â´× 8´, observed simultaneously in the three spectral bands. Its main operating mode is scan-mapping, whereby the field of view is scanned across the sky to achieve full spatial sampling and to cover large areas if desired. The spectrometer has an approximately circular field of view with a diameter of 2.6´. The spectral resolution can be adjusted between 1.2 and 25 GHz by changing the stroke length of the FTS scan mirror. Its main operating mode involves a fixed telescope pointing with multiple scans of the FTS mirror to acquire spectral data. For extended source measurements, multiple position offsets are implemented by means of an internal beam steering mirror to achieve the desired spatial sampling and by rastering of the telescope pointing to map areas larger than the field of view. The SPIRE instrument consists of a cold focal plane unit located inside the Herschel cryostat and warm electronics units, located on the spacecraft Service Module, for instrument control and data handling. Science data are transmitted to Earth with no on-board data compression, and processed by automatic pipelines to produce calibrated science products. The in-flight performance of the instrument matches or exceeds predictions based on pre-launch testing and modelling: the photometer sensitivity is comparable to or slightly better than estimated pre-launch, and the spectrometer sensitivity is also better by a factor of 1.5-2.
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Kardakova, A., Finkel, M., Morozov, D., Kovalyuk, V., An, P., Dunscombe, C., et al. (2013). The electron-phonon relaxation time in thin superconducting titanium nitride films. Appl. Phys. Lett., 103(25), 252602 (1 to 4).
Abstract: We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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