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Gershenzon, E. M., Goltsman, G., Orlova, S., Ptitsina, N., & Gurvich, Y. (1971). Germanium hot-electron narrow-band detector. Sov. Radio Engineering And Electronic Physics, 16(8), 1346.
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Gershenzon, E., Goltsman, G., Orlov, L., & Ptitsina, N. (1978). Population of excited-states of small admixtures in germanium. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1154–1159). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1983). Kinetics of electron and hole binding into excitons in germanium. Sov. Phys. JETP, 57(2), 369–376.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Goltsman, G. N., Maliavkin, A. V., Ptitsina, N. G., & Selevko, A. G. (1986). Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 50, pp. 280–281).
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Ptitsina, N. G., Chulkova, G. M., & Gershenzon, E. M. (1995). Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films. JETP, 80(5), 960–964.
Abstract: The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
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