| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
| Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
1998 |
Proc. 6-th Int. Conf. Terahertz Electron. |
|
18-20 |
| Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1231-1234 |
| Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
| Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Germanium hot-electron narrow-band detector |
1971 |
Sov. Radio Engineering And Electronic Physics |
16 |
1346 |
