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Author |
Hübers, Heinz-Wilhelm; Semenov, Alexei; Schubert, Josef; Gol'tsman, Gregory; Voronov, Boris; Gershenzon, Evgeni |
Title |
Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz |
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Conference Article |
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2000 |
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Proc. 8-th Int. Conf. on Terahertz Electronics |
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Proc. 8-th Int. Conf. on Terahertz Electronics |
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117-119 |
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NbN HEB mixers |
Abstract |
We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens. |
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Darmstadt, Germany |
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International Conference on Terahertz Electronics [8th], Held inDarmstadt, Germany on 28-29 September 2000 |
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1553 |
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Darula, Marian; Semenov, Alex D.; Hübers, Heinz-Wilhelm; Schubert, Josef |
Title |
Quasioptical high-Tc superconductor Josephson mixer at terahertz frequencies |
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Abstract |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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515 |
Keywords |
HTS Josephson mixers |
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Mixers based on Josephson junctions from conventional superconductor materials have demonstrated excellent performance at subgap frequencies. The advantages of Josephson mixers are low optimal power of the local oscillator and large intermediate frequency bandwidth but their noise temperature increases dramatically at frequencies corresponding to the energy gap of the superconductor, which is typically below 1 THz for widely used materials. The large energy gap of oxide superconductors makes them promising candidates for development of terahertz Josephson mixers. Here we report on experimental study of the quasioptical mixer utilizing bicrystal Josephson junction from high-transition-temperature YBa 2 Cu 3 O 7-δ film. Junctions with a width of 2 µm were fabricated from 100 nm thick laser ablated films on bicrystal MgO substrates and had the and the J C R n product of about 2 mV at 4.2 K. The planar complementary logarithmic spiral antenna incorporated into co-planar waveguide was patterned from 200 nm thick gold film thermally evaporated in situ on top of the YBa 2 Cu 3 O 7-δ film. The mixer chip was clamped to the extended hemispherical silicon lens. Performance of the mixer was investigated at 4.5 K bath temperature. We used FIR laser as a local oscillator at frequencies 0.698 and 2.52 THz. System noise temperature (DSB) was determined from Y-factor measured with 300 K and 77 K loads. At 0.698 THz the lowest noise temperature 1750 K was observed when the mixer was biased with the fixed current to the region in the vicinity of either the first Shapiro step or the critical current. Between these two bias points the noise temperature increased to ≈ 20000 K. As function of the local oscillator power the noise temperature reached the minimum when the critical current was suppressed to the half of its equilibrium value. Power of the local oscillator absorbed by the mixer at optimal operation was of the order 100 nW. The present design of our antenna limits the upper operation frequency to the value of 1.8 THz. Nevertheless, we clearly observed Shapiro steps at the frequency 2.52 THz. Bearing in mind an improved design of the antenna, we estimate the 3000 K DSB noise temperature at this frequency. |
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1555 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
Title |
Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
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Journal Article |
Year |
1999 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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9 |
Issue |
2 |
Pages |
3757-3760 |
Keywords |
NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1051-8223 |
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1569 |
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Author |
Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
Title |
Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz |
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Conference Article |
Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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190-199 |
Keywords |
NbN HEB mixers |
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We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit. |
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1573 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
Title |
NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz |
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Conference Article |
Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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238-246 |
Keywords |
NbN HEB mixers |
Abstract |
The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported. |
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1575 |
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Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. |
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A high resolution spectrometer for the investigation of molecular structures in the THZ range |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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530-538 |
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antireflection coatings, dielectric mirrors |
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A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%. |
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1577 |
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Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
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Conference Article |
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1999 |
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Inst. Phys. Conf. |
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Inst. Phys. Conf. |
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167 |
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663-666 |
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NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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1578 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. |
Title |
Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies |
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Conference Article |
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1998 |
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Proc. 6-th Int. Conf. Terahertz Electron. |
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Proc. 6-th Int. Conf. Terahertz Electron. |
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149-152 |
Keywords |
NbN HEB mixers |
Abstract |
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB. |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1582 |
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Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
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Picosecond response of a superconducting hot-electron NbN photodetector |
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Journal Article |
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1998 |
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Appl. Supercond. |
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Appl. Supercond. |
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6 |
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7-9 |
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423-428 |
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NbN SSPD, SNSPD |
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The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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0964-1807 |
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1584 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
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Journal Article |
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1997 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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70 |
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12 |
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1619-1621 |
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NbN HEB mixers |
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Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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1599 |
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