| Records |
| Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
| Title |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
Type |
Conference Article |
| Year |
2018 |
Publication |
Proc. Optical Sensing and Detection V |
Abbreviated Journal |
Proc. Optical Sensing and Detection V |
| Volume |
10680 |
Issue |
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Pages |
30-39 |
| Keywords |
graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves |
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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Spie |
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Editor |
Berghmans, F.; Mignani, A.G. |
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no |
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10.1117/12.2307020 |
Serial |
1306 |
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| Author |
Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
| Title |
Spectral sensitivity of narrow strip NbN superconducting single-photon detector |
Type |
Conference Article |
| Year |
2011 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
8072 |
Issue |
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Pages |
80720G (1 to 9) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs. |
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SPIE |
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Editor |
Fiurásek, J.; Prochazka, I. |
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Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III |
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no |
| Call Number |
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Serial |
1387 |
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| Author |
Goltsman, G. N. |
| Title |
Ultrafast nanowire superconducting single-photon detector with photon number resolving capability |
Type |
Conference Article |
| Year |
2009 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
7236 |
Issue |
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Pages |
72360D (1 to 11) |
| Keywords |
PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films |
| Abstract |
In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time. |
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SPIE |
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Editor |
Arakawa, Y.; Sasaki, M.; Sotobayashi, H. |
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no |
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1403 |
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Smirnov, K. V.; Vachtomin, Y. B.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Korneev, A. A.; Goltsman, G. N. |
| Title |
Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography |
Type |
Conference Article |
| Year |
2008 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
7138 |
Issue |
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Pages |
713827 (1 to 6) |
| Keywords |
SSPD, SNSPD, superconducting single photon detector, ultra-thin superconducting films, optical fiber coupling, ready to use receiver |
| Abstract |
At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (TC=10-11 K, jC= 5-7•106 A/cm2); the sensitive area dimensions are 10×10 μm2. The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 μm), >4 % (at 1.55 μm); dark counts rate ≤1 s-1; duration of voltage pulse ≤5 ns; jitter ≤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar. |
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Spie |
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Tománek, P.; Senderáková, D.; Hrabovský, M. |
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no |
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1405 |
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Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R. |
| Title |
Advanced nanostructured optical NbN single-photon detector operated at 2.0 K |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5732 |
Issue |
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Pages |
520-529 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography. |
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Spie |
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Editor |
Razeghi, M.; Brown, G.J. |
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Conference |
Quantum Sensing and Nanophotonic Devices II |
| Notes |
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no |
| Call Number |
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Serial |
1478 |
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