Il'in, K. S., Gol'tsman, G. N., Voronov, B. M., & Sobolewski, R. (1999). Characterization of the electron energy relaxation process in NbN hot-electron devices. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 390–397).
Abstract: We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Schubert, J., Semenov, A., Hübers, H. - W., Gol'tsman, G., Schwaab, G., Voronov, B., et al. (1999). Broad-band terahertz NbN hot-electron bolometric mixer. In Inst. Phys. Conf. (Vol. 167, pp. 663–666).
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. - W., et al. (1998). Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies. In Proc. 6-th Int. Conf. Terahertz Electron. (pp. 149–152).
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
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Svechnikov, S., Verevkin, A., Voronov, B., Menschikov, E., Gershenzon, E., & Gol'tsman, G. (1998). Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 45–51).
Abstract: The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness nm) NbN 1.5 pm wide and 0.2 i.um long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.
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Gousev, Y. P., Olsson, H. K., Gol'tsman, G. N., Voronov, B. M., & Gershenzon, E. M. (1998). NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 121–129).
Abstract: We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
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