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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
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Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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45 |
Issue |
4 |
Pages |
769-776 |
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Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
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Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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1727 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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45 |
Issue |
3 |
Pages |
555-565 |
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Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
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The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
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Journal Article |
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Year |
1976 |
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JETP Lett. |
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JETP Lett. |
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24 |
Issue |
3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Journal Article |
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Year |
1976 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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43 |
Issue |
1 |
Pages |
116-122 |
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Keywords |
Ge, free excitons |
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Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Title |
Energy spectrum of free excitons in germanium |
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Journal Article |
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Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
18 |
Issue |
3 |
Pages |
93 |
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Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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