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Author Чулкова, Галина Меркурьевна; Семёнов, Александр Владимирович; Тархов, Михаил Александрович; Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Смирнов, Константин Владимирович
Title О возможности использования PNR-SNPD в системах телекоммуникационной связи Type Journal Article
Year 2012 Publication Преподаватель ХХI век Abbreviated Journal
Volume Issue 2 Pages 244-246
Keywords PNR SSPD, SNSPD, SNPD
Abstract Рассмотрена возможность применения сверхпроводникового нанополоскового детектора, разрешающего число фотонов (Photon-Number Resolving Superconducting Nanowire Photon Detector, PNR-SNPD), в качестве датчика приёмных модулей телекоммуникационных линий. Оценена мощность оптического импульса, необходимая для достижения приемлемо низкой доли ошибочных битов.
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Language Russian Summary Language Original Title
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Notes Approved no
Call Number Serial 1826
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Author Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
Title Design of resonator for superconducting single-photon detector Type Journal Article
Year 2011 Publication Rus. J. Radio Electron. Abbreviated Journal Rus. J. Radio Electron.
Volume Issue 12 Pages
Keywords SSPD optical resonator, SNSPD
Abstract A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance.
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Language Russian Summary Language Original Title
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Notes 6 pages Approved no
Call Number Serial 1827
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Author Гольцман, Г. Н.; Смирнов, К. В.
Title По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Type Journal Article
Year 2001 Publication Письма в ЖЭТФ Abbreviated Journal Письма в ЖЭТФ
Volume 74 Issue 9 Pages 532-538
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.
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Notes Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” Approved no
Call Number Serial 1832
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Author Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D.
Title Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux Type Journal Article
Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 98 Issue 13 Pages 134504 (1 to 14)
Keywords SNSPD, NbN namowires
Abstract We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1842
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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.
Volume 7 Issue 3 Pages 2000872
Keywords SWCNT transistors
Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2199-160X ISBN Medium
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Notes Approved no
Call Number Serial 1843
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Author Gershenzon, E. M.; Goltsman, G. N.
Title Zeeman effect in excited-states of donors in germanium Type Journal Article
Year 1972 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 6 Issue 3 Pages 509
Keywords Ge, donors, Zeeman effect
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Publisher (up) Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Approved no
Call Number Serial 1737
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords GaAs, excited donor states
Abstract
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Publisher (up) Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
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Notes Approved no
Call Number Serial 1733
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Author Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G.
Title An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 15 Issue 2 Pages 472-475
Keywords HEB mixer
Abstract
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Corporate Author Thesis
Publisher (up) IEEE Place of Publication Editor
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Notes Approved no
Call Number Serial 371
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Author Zhang, Jin; Slysz, W.; Verevkin, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G. N.; Sobolewski, R.
Title Response time characterization of NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 13 Issue 2 Pages 180-183
Keywords SSPD jitter, SNSPD jitter
Abstract We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Publisher (up) IEEE Place of Publication Editor
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Notes Approved no
Call Number Serial 1058
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Author Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N.
Title Superconducting single-photon detector made of MoSi film Type Journal Article
Year 2014 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 27 Issue 9 Pages 095012
Keywords SSPD, SNSPD
Abstract We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
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Publisher (up) IOP Publishing Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
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Notes Approved no
Call Number RPLAB @ sasha @ korneeva2014superconducting Serial 1044
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Author Smirnov, Konstantin; Vachtomin, Yury; Divochiy, Alexander; Antipov, Andrey; Goltsman, Gregory
Title Dependence of dark count rates in superconducting single photon detectors on the filtering effect of standard single mode optical fibers Type Journal Article
Year 2015 Publication Appl. Phys. Express Abbreviated Journal Appl. Phys. Express
Volume 8 Issue 2 Pages 022501 (1 to 4)
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Corporate Author Thesis
Publisher (up) IOP Publishing Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1882-0778 ISBN Medium
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Notes Approved no
Call Number RPLAB @ sasha @ smirnov2015dependence Serial 1049
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G.
Title Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 32 Issue 7 Pages 075003
Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate
Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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Publisher (up) IOP Publishing Place of Publication Editor
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Notes Approved no
Call Number Antipov_2019 Serial 1277
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics
Volume 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Publisher (up) MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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Author Goltsman, G.
Title Simple method for stabilizing power of submillimetric spectrometer Type Journal Article
Year 1972 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta
Volume Issue 1 Pages 136
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Publisher (up) Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia Place of Publication Editor
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Notes Approved no
Call Number Serial 1738
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title Germanium hot-electron narrow-band detector Type Journal Article
Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics
Volume 16 Issue 8 Pages 1346
Keywords Ge HEB detectors
Abstract
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Publisher (up) Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor
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Notes Approved no
Call Number Serial 1741
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