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Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1990). Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation. Solid State Communications, 76(4), 493–497.
Abstract: The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
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Varyukhin, S. V., Zakharov, A. A., Gershenzon, E. M., Gol'tsman, G. N., Ptitsyna, N. G., & Chulkova, G. M. (1990). AC losses and submillimeter absorption in single crystals La2CuO4. Phys. B Condens. Mat., 165-166, 1269–1270.
Abstract: The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
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Gershenzon, E. M., Gol'tsman, G. N., Potapov, V. D., & Sergeev, A. V. (1990). Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction. Solid State Communications, 75(8), 639–641.
Abstract: Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.
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Varyukhin, S. V., Zakharov, A. A., Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., & Chulkova, G. M. (1990). Low energy excitation in La2CuO4. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 3(5), 832–837.
Abstract: Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.
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Воеводин, Е. И., Гершензон, Е. М., Гольцман, Г. Н., & Птицина, Н. Г. (1989). Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge. Физика и техника полупроводников, 23(8), 1356–1361.
Abstract: Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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