Золотов, Ф. И., & Смирнов, К. В. (2019). Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия. In Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского (pp. 204–205). МИЭМ НИУ ВШЭ.
Abstract: В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию.
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Смирнов, К. В. (2009). Создание приборов на сверхпроводниковых счетчиках фотонов и методов диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках. Министерство образования и науки РФ.
Abstract: Этап №1 (дата окончания: 30.09.2009)
Разработана методика изготовления сверхпроводниковых однофотонных детекторов (SSPD) с монокристаллической структурой пленки сверхмалой толщины. Изготовлены экспериментальные образцы сверхпроводниковых однофотонных детекторов (SSPD). Разработана методика пакетирования сверхпроводникового однофотонного детектора в оптический узел с одномодовым оптоволокном. Изготовлены экспериментальные образцы приемных модулей на основе однофотонных сверхпроводниковых детекторов из NbN-нанопленок.
Этап №2 (дата окончания: 28.10.2009)
Разработаны методы диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках и методика измерения мощности излучения полупроводниковых лазеров на квантовых точках с использованием сверхпроводниковых однофотонных детекторов (SSPD). Проведена технико-экономическая оценка рыночного потенциала полученных результатов.
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Kovaluyk, V., Lazarenko, P., Kozyukhin, S., An, P., Prokhodtsov, A., Goltsman, G., et al. (2019). Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In Proc. Amorphous and Nanostructured Chalcogenides (pp. 47–48). Technical University of Moldova.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Matyushkin, Y., Kaurova, N., Voronov, B., Goltsman, G., & Fedorov, G. (2020). On chip carbon nanotube tunneling spectroscopy. Fullerenes, Nanotubes and Carbon Nanostructures, 28(1), 50–53.
Abstract: We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.
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Ozhegov, R. V., Gorshkov, K. N., Vachtomin, Y. B., Smirnov, K. V., Finkel, M. I., Goltsman, G. N., et al. (2014). Terahertz imaging system based on superconducting heterodyne integrated receiver. In C. Corsi, & F. Sizov (Eds.), Proc. THz and Security Applications (pp. 113–125). Dordrecht: Springer Netherlands.
Abstract: The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K.
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