Abstract: We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.

Abstract: We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes.

Abstract: A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.