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Author Smirnov, K.; Korneev, A.; Minaeva, O.; Divochiy, A.; Tarkhov, M.; Ryabchun, S.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol'tsman, G.; Polonsky, S. url  doi
openurl 
  Title Ultrathin NbN film superconducting single-photon detector array Type Conference Article
  Year 2007 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 61 Issue Pages 1081-1085  
  Keywords SSPD array  
  Abstract We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes.  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (up) 408  
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Author Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. url  openurl
  Title Fabrication and characterisation of NbN HEB mixers with in situ gold contacts Type Conference Article
  Year 2008 Publication Proc. 19th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 19th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 62-67  
  Keywords HEB, mixer, NbN, in-situ contacts  
  Abstract We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts.  
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  Publisher Place of Publication Groningen, Netherlands Editor  
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  Notes Approved no  
  Call Number Serial (up) 412  
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Author Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N. url  openurl
  Title NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling Type Conference Article
  Year 2009 Publication Proc. 20th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 20th ISSTT  
  Volume Issue Pages 151-154  
  Keywords HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Charlottesville, USA Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (up) 590  
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Author Tretyakov, I. V.; Ryabchun, S. A.; Maslennikov, S. N.; Finkel, M. I.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G.N. openurl 
  Title NbN HEB mixer: fabrication, noise temperature reduction and characterization Type Conference Article
  Year 2008 Publication Proc. Basic problems of superconductivity Abbreviated Journal  
  Volume Issue Pages  
  Keywords HEB, mixer, noise temperature, conversion gain bandwidth  
  Abstract We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer.  
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  Publisher Place of Publication Moscow-Zvenigorod Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (up) 591  
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Author Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. doi  openurl
  Title Low-noise wide-band hot-electron bolometer mixer based on an NbN film Type Journal Article
  Year 2009 Publication Radiophys. Quant. Electron. Abbreviated Journal  
  Volume 52 Issue 8 Pages 576-582  
  Keywords HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel  
  Abstract We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.  
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  Notes Approved no  
  Call Number Serial (up) 599  
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Author Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G. openurl 
  Title Superconducting NbN terahertz detectors and infrared photon counters Type Journal Article
  Year 2010 Publication Вестник НГУ. Серия: физ. Abbreviated Journal Вестник НГУ. Серия: физ.  
  Volume 5 Issue 4 Pages 68-72  
  Keywords HEB; HEB mixer  
  Abstract We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films.  
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  ISSN 1818-7994 ISBN Medium  
  Area Expedition Conference  
  Notes УДК 538.9 Approved no  
  Call Number RPLAB @ gujma @ Serial (up) 708  
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Author Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. doi  openurl
  Title Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2300304  
  Keywords HEB detector responsivity, HEB model, numerical calculations, numerical model  
  Abstract We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.  
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  Notes Approved no  
  Call Number Serial (up) 953  
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Author Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. url  doi
openurl 
  Title Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter Type Abstract
  Year 2010 Publication 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves Abbreviated Journal  
  Volume Issue Pages 1-1  
  Keywords SSPD, SNSPD, HEB  
  Abstract We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.  
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  ISSN 2162-2027 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ sasha @ goltsman2010superconducting Serial (up) 1028  
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Author Smirnov, A. V.; Baryshev, A. M.; de Bernardis, P.; Vdovin, V. F.; Gol'tsman, G. N.; Kardashev, N. S.; Kuz'min, L. S.; Koshelets, V. P.; Vystavkin, A. N.; Lobanov, Yu. V.; Ryabchun, S. A.; Finkel, M. I.; Khokhlov, D. R. doi  openurl
  Title The current stage of development of the receiving complex of the millimetron space observatory Type Journal Article
  Year 2012 Publication Radiophys. Quant. Electron. Abbreviated Journal Radiophys. Quant. Electron.  
  Volume 54 Issue 8 Pages 557-568  
  Keywords Millimetron space observatory, HEB applications  
  Abstract We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported.  
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  Notes Approved no  
  Call Number Serial (up) 1079  
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Author Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. url  openurl
  Title Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions Type Journal Article
  Year 2011 Publication Rus. J. Radio Electron. Abbreviated Journal Rus. J. Radio Electron.  
  Volume Issue 10 Pages  
  Keywords terahertz electromagnetic radiation; superconductors; detectors of terahertz range  
  Abstract A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.  
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  Notes 7 pages Approved no  
  Call Number Serial (up) 1117  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Journal Article
  Year 2019 Publication Phys. Status Solidi RRL Abbreviated Journal Phys. Status Solidi RRL  
  Volume 13 Issue 9 Pages 1900187-(1-6)  
  Keywords  
  Abstract For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1862-6254 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (up) 1149  
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Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
  Year 2020 Publication Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)  
  Volume 10 Issue 5 Pages 1-12  
  Keywords detector; quantum dots; short-wave infrared range; silicon  
  Abstract In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.  
  Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia  
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  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2079-4991 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:32365694; PMCID:PMC7712218 Approved no  
  Call Number Serial (up) 1151  
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  isbn
openurl 
  Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO  
  Volume Issue Pages 369-371  
  Keywords silicon detector, quantum dot, IR, surface states  
  Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.  
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  ISSN ISBN 978-5-89513-451-1 Medium  
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  Notes Approved no  
  Call Number Serial (up) 1154  
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Author Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. url  openurl
  Title Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers Type Conference Article
  Year 2015 Publication Proc. 26th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 26th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 39  
  Keywords NbN HEB mixers  
  Abstract Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).  
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  Call Number Serial (up) 1159  
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. url  doi
openurl 
  Title Relaxation of the resistive superconducting state in boron-doped diamond films Type Journal Article
  Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 93 Issue 6 Pages 064506  
  Keywords boron-doped diamond films, resistive superconducting state, relaxation time  
  Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.  
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  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (up) 1167  
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