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Author Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N.
Title Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime Type Journal Article
Year 2020 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 128 Issue 22 Pages 224303 (1 to 11)
Keywords HEB, resonant tunneling diode, RTD
Abstract The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
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Language Summary Language Original Title
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ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 1262
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Author Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.
Title Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation Type Journal Article
Year 2015 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 118 Issue 19 Pages 194303
Keywords terahertz detectors, asymmetric carbon nanotubes, CNT
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 1169
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Author Driessen, E. F. C.; Braakman, F. R.; Reiger, E. M.; Dorenbos, S. N.; Zwiller, V.; de Dood, M. J. A.
Title Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors Type Journal Article
Year 2009 Publication Eur. Phys. J. Appl. Phys. Abbreviated Journal
Volume 47 Issue Pages 10701
Keywords SSPD, SNSPD
Abstract We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity.
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Language English Summary Language Original Title
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Notes Approved no
Call Number RPLAB @ alex_kazakov @ Serial (down) 1062
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Author Annunziata, Anthony J.; Quaranta, Orlando; Santavicca, Daniel F.; Casaburi, Alessandro; Frunzio, Luigi; Ejrnaes, Mikkel; Rooks, Michael J.; Cristiano, Roberto; Pagano, Sergio; Frydman, Aviad; Prober, Daniel E.
Title Reset dynamics and latching in niobium superconducting nanowire single-photon detectors Type Journal Article
Year 2010 Publication J. Appl. Phys. Abbreviated Journal
Volume 108 Issue 8 Pages 7
Keywords SNSPD
Abstract We study the reset dynamics of niobium (Nb) superconducting nanowire single-photon detectors (SNSPDs) using experimental measurements and numerical simulations. The numerical simulations of the detection dynamics agree well with experimental measurements, using independently determined parameters in the simulations. We find that if the photon-induced hotspot cools too slowly, the device will latch into a dc resistive state. To avoid latching, the time for the hotspot to cool must be short compared to the inductive time constant that governs the resetting of the current in the device after hotspot formation. From simulations of the energy relaxation process, we find that the hotspot cooling time is determined primarily by the temperature-dependent electron-phonon inelastic time. Latching prevents reset and precludes subsequent photon detection. Fast resetting to the superconducting state is, therefore, essential, and we demonstrate experimentally how this is achieved. We compare our results to studies of reset and latching in niobium nitride SNSPDs.
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Call Number RPLAB @ gujma @ Serial (down) 649
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Author Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki
Title Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation Type Journal Article
Year 1987 Publication J. Appl. Phys. Abbreviated Journal
Volume 62 Issue 3 Pages 1010-1016
Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions
Abstract The time‐resolved luminescence spectra from excited conduction subbands in three samples of multi‐quantum‐well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high‐density excitations by a 30‐ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time‐resolved spectrum to the observed, and the time‐dependent electron energy was obtained by using these parameters. The energy‐loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron‐polar phonon scattering, including the screening effect due to the high carrier density.
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Notes Approved no
Call Number Serial (down) 635
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V.
Title Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes Type Journal Article
Year 2007 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 101 Issue 12 Pages 124508 (1 to 6)
Keywords HEB, mixer, membrane
Abstract The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Language Summary Language Original Title
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ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 560
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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; LeDuc, H. G.
Title Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers Type Journal Article
Year 1999 Publication J. Appl. Phys. Abbreviated Journal
Volume 85 Issue 3 Pages 1644-1653
Keywords HEB, mixer
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ISSN 0021-8979 ISBN Medium
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Call Number Serial (down) 556
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Author Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W.
Title Ultimate performance of a superconducting quantum detector Type Journal Article
Year 2003 Publication Eur. Phys. J. Appl. Phys. Abbreviated Journal Eur. Phys. J. Appl. Phys.
Volume 21 Issue 3 Pages 171-178
Keywords NbN SSPD, SNSPD
Abstract We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance.
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ISSN 1286-0042 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial (down) 534
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Author Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G.
Title IF impedance and mixer gain of NbN hot electron bolometers Type Journal Article
Year 2007 Publication J. Appl. Phys. Abbreviated Journal
Volume 101 Issue 4 Pages 044511
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Call Number RPLAB @ s @ Serial (down) 445
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Author Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q.
Title Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer Type Journal Article
Year 2006 Publication J. Appl. Phys. Abbreviated Journal
Volume 100 Issue 7 Pages 074507
Keywords HEB
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ISSN 0021-8979 ISBN Medium
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Notes Approved no
Call Number RPLAB @ s @ Serial (down) 385
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