Korneev, A., Korneeva, Y., Florya, I., Elezov, M., Manova, N., Tarkhov, M., et al. (2011). Recent advances in superconducting NbN single-photon detector development. In Proc. SPIE (Vol. 8072, 807202 (1 to 10)).
Abstract: Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.
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Manova, N. N., Korneeva, Y. P., Korneev, A. A., Slysz, W., Voronov, B. M., & Gol'tsman, G. N. (2011). Superconducting NbN single-photon detector integrated with quarter-wave resonator. Tech. Phys. Lett., 37(5), 469–471.
Abstract: The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
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Baek, B., Lita, A. E., Verma, V., & Nam, S. W. (2011). Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm. Appl. Phys. Lett., 98(25), 3.
Abstract: We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Miller, A. J., Lita, A. E., Calkins, B., Vayshenker, I., Gruber, S. M., & Nam, S. W. (2011). Compact cryogenic self-aligning fiber-to-detector coupling with losses below one percent. Opt. Express, 19(10), 9102–9110.
Abstract: We present a compact packaging technique for coupling light from a single-mode telecommunication fiber to cryogenic single-photon sensitive devices. Our single-photon detectors are superconducting transition-edge sensors (TESs) with a collection area only a factor of a few larger than the area of the fiber core which presents significant challenges to low-loss fiber-to-detector coupling. The coupling method presented here has low loss, cryogenic compatibility, easy and reproducible assembly and low component cost. The system efficiency of the packaged single-photon counting detectors is verified by the “triplet method†of power-source calibration along with the “multiple attenuator†method that produces a calibrated single-photon flux. These calibration techniques, when used in combination with through-wafer imaging and fiber back-reflection measurements, give us confidence that we have achieved coupling losses below 1 % for all devices packaged according to the self-alignment method presented in this paper.
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Steudle, G. A., Schietinger, S., Höckel, D., Dorenbos, S. N., Zwiller, V., & Benson, O. (2011). Quantum nature of light measured with a single detector. arXiv, , 7.
Abstract: We realized the most fundamental quantum optical experiment to prove the non-classical character of light: Only a single quantum emitter and a single superconducting nanowire detector were used. A particular appeal of our experiment is its elegance and simplicity. Yet its results unambiguously enforce a quantum theory for light. Previous experiments relied on more complex setups, such as the Hanbury-Brown-Twiss configuration, where a beam splitter directs light to two photodetectors, giving the false impression that the beam splitter is required. Our work results in a major simplification of the widely used photon-correlation techniques with applications ranging from quantum information processing to single-molecule detection.
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Sprengers, J. P., Gaggero, A., Sahin, D., Nejad, S. J., Mattioli, F., Leoni, R., et al. (2011). Waveguide single-photon detectors for integrated quantum photonic circuits. arXiv, , 11.
Abstract: he generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators.
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Engel, A., Aeschbacher, A., Inderbitzin, K., Schilling, A., Il'in, K., Hofherr, M., et al. (2011). Tantalum nitride superconducting single-photon detectors with low cut-off energy. arXiv, , 9.
Abstract: Materials with a small superconducting energy gap favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. This results in a reduction of the minimum photon energy required for direct detection to $\approx1/3$ as compared to NbN.
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Bulaevskii, L. N., Graf, M. J., Batista, C. D., & Kogan, V. G. (2011). Vortex-induced dissipation in narrow current-biased thin-film superconducting strips. Phys. Rev. B, 83(14), 9.
Abstract: A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length ξ and of width w much narrower than the Pearl length Λâ‰<ab>wâ‰<ab>ξ. At high bias currents I*<I<Ic the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Furthermore, we argue that such “hot†vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, that is, in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing.
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Dorenbos, S. N., Heeres, R. W., Driessen, E. F. C., & Zwiller, V. (2011). Efficient and robust fiber coupling of superconducting single photon detectors. arXiv, , 6.
Abstract: We applied a recently developed fiber coupling technique to superconducting single photon detectors (SSPDs). As the detector area of SSPDs has to be kept as small as possible, coupling to an optical fiber has been either inefficient or unreliable. Etching through the silicon substrate allows fabrication of a circularly shaped chip which self aligns to the core of a ferrule terminated fiber in a fiber sleeve. In situ alignment at cryogenic temperatures is unnecessary and no thermal stress during cooldown, causing misalignment, is induced. We measured the quantum efficiency of these devices with an attenuated tunable broadband source. The combination of a lithographically defined chip and high precision standard telecommunication components yields near unity coupling efficiency and a system detection efficiency of 34% at a wavelength of 1200 nm. This quantum efficiency measurement is confirmed by an absolute efficiency measurement using correlated photon pairs (with $\lambda$ = 1064 nm) produced by spontaneous parametric down-conversion. The efficiency obtained via this method agrees well with the efficiency measured with the attenuated tunable broadband source.
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Edlmayr, V., Harzer, T. P., Hoffmann, R., Kiener, D., Scheu, C., & Mitterer, C. (2011). Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A, 29(4), 8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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