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Author Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. url  doi
openurl 
  Title Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime Type Journal Article
  Year 2020 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 128 Issue 22 Pages 224303 (1 to 11)  
  Keywords HEB, resonant tunneling diode, RTD  
  Abstract The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (down) 1262  
Permanent link to this record
 

 
Author Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. url  doi
openurl 
  Title Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation Type Journal Article
  Year 2015 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 118 Issue 19 Pages 194303  
  Keywords terahertz detectors, asymmetric carbon nanotubes, CNT  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (down) 1169  
Permanent link to this record
 

 
Author Driessen, E. F. C.; Braakman, F. R.; Reiger, E. M.; Dorenbos, S. N.; Zwiller, V.; de Dood, M. J. A. doi  openurl
  Title Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors Type Journal Article
  Year 2009 Publication Eur. Phys. J. Appl. Phys. Abbreviated Journal  
  Volume 47 Issue Pages 10701  
  Keywords SSPD, SNSPD  
  Abstract We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity.  
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  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ alex_kazakov @ Serial (down) 1062  
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Author Annunziata, Anthony J.; Quaranta, Orlando; Santavicca, Daniel F.; Casaburi, Alessandro; Frunzio, Luigi; Ejrnaes, Mikkel; Rooks, Michael J.; Cristiano, Roberto; Pagano, Sergio; Frydman, Aviad; Prober, Daniel E. openurl 
  Title Reset dynamics and latching in niobium superconducting nanowire single-photon detectors Type Journal Article
  Year 2010 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 108 Issue 8 Pages 7  
  Keywords SNSPD  
  Abstract We study the reset dynamics of niobium (Nb) superconducting nanowire single-photon detectors (SNSPDs) using experimental measurements and numerical simulations. The numerical simulations of the detection dynamics agree well with experimental measurements, using independently determined parameters in the simulations. We find that if the photon-induced hotspot cools too slowly, the device will latch into a dc resistive state. To avoid latching, the time for the hotspot to cool must be short compared to the inductive time constant that governs the resetting of the current in the device after hotspot formation. From simulations of the energy relaxation process, we find that the hotspot cooling time is determined primarily by the temperature-dependent electron-phonon inelastic time. Latching prevents reset and precludes subsequent photon detection. Fast resetting to the superconducting state is, therefore, essential, and we demonstrate experimentally how this is achieved. We compare our results to studies of reset and latching in niobium nitride SNSPDs.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial (down) 649  
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Author Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki openurl 
  Title Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation Type Journal Article
  Year 1987 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 62 Issue 3 Pages 1010-1016  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The time‐resolved luminescence spectra from excited conduction subbands in three samples of multi‐quantum‐well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high‐density excitations by a 30‐ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time‐resolved spectrum to the observed, and the time‐dependent electron energy was obtained by using these parameters. The energy‐loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron‐polar phonon scattering, including the screening effect due to the high carrier density.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial (down) 635  
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