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Лудков, Д. Н. (2005). Терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN и NbTiN. Ph.D. thesis, , .
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Zhou, Y. D., Becker, C. R., Ashokan, R., Selamet, Y., Chang, Y., Boreiko, R. T., et al. (2002). Progress in far-infrared detection technology. In Proc. SPIE (Vol. 4795, pp. 121–128). Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series.
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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Parvitte, B., Thomas, X., & Courtois, D. (1995). Wide band (2.5 GHz) infrared heterodyne spectrometer. Int. J. Infrared and Millimeter Waves, 16(9), 1533–1540.
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Lubzens, D., Rosenfeld, D., & Nemirovsky, Y. (1988). The noise equivalent temperature difference performance of HgCdTe photodiode array. Infrared Physics, 28(6), 417–423.
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Gordon, N. T., Lees, D. J., Bowen, G., Phillips, T. S., Haigh, M., Jones, C. L., et al. (2006). HgCdTe detectors operating above 200 K. J. Electron. Mater., 35(6), 1140–1144.
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Siemsen, K. J., Bernard, J. E., Madej, A. A., & Marmet, L. (2001). Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz. Appl. Phys. B: Lasers and Optics, 72, 567–573.
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Kostiuk, T. (2003). Heterodyne spectroscopy in the thermal infrared region: a window on physics and chemistry. In University of Maryland Inn and Conference Center (Ed.), Proc. International Thermal Detectors Workshop (TDW'03), session 7 (Heterodyne detectors). 3501 University Boulevar East Adelphi, MD 20783.
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Gershenson, M. E., Gong, D., Sato, T., Karasik, B. S., & Sergeev, A. V. (2001). Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett., 79, 2049–2051.
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Gol'tsman, G. N., Semenov, A. D., Gousev, Y. P., Zorin, M. A., Gogidze, I. G., Gershenzon, E. M., et al. (1991). Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light. Supercond. Sci. Technol., 4(9), 453–456.
Abstract: The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.
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