Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of a silicon membrane-based multipixel hot electron bolometer receiver. IEEE Trans. Appl. Supercond., 27(4), 1–5.
Abstract: We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Trifonov, A., Tong, C. - Y. E., Lobanov, Y., Kaurova, N., Blundell, R., & Goltsman, G. (2017). Photon absorption near the gap frequency in a hot electron bolometer. IEEE Trans. Appl. Supercond., 27(4), 1–4.
Abstract: The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
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Tong, C. - Y. E., Trifonov, A., Shurakov, A., Blundell, R., & Gol’tsman, G. (2015). A microwave-operated hot-electron-bolometric power detector for terahertz radiation. IEEE Trans. Appl. Supercond., 25(3), 2300604 (1 to 4).
Abstract: A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.
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Trifonov, A., Tong, C. - Y. E., Blundell, R., Ryabchun, S., & Gol'tsman, G. (2015). Probing the stability of HEB mixers with microwave injection. IEEE Trans. Appl. Supercond., 25(3), 2300404 (1 to 4).
Abstract: Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.
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Shurakov, A., Tong, C. - Y. E., Blundell, R., Kaurova, N., Voronov, B., & Gol'tsman, G. (2013). Microwave stabilization of a HEB mixer in a pulse-tube cryocooler. IEEE Trans. Appl. Supercond., 23(3), 1501504.
Abstract: We report the results of our study of the stability of an 800 GHz hot electron bolometer (HEB) mixer cooled with a pulse-tube cryocooler. Pulse-tube cryocoolers introduce temperature fluctuations as well as mechanical vibrations at a frequency of ~1 Hz, both of which can cause receiver gain fluctuations at that frequency. In our system, the motor of the cryocooler was separated from the cryostat to minimize mechanical vibrations, leaving thermal effects as the dominant source of the receiver gain fluctuations. We measured root mean square temperature variations of the 4 K stage of ~7 mK. The HEB mixer was pumped by a solid state local oscillator at 810 GHz. The root mean square current fluctuations at the low noise operating point (1.50 mV, 56.5 μA) were ~0.12 μA, and were predominantly due to thermal fluctuations. To stabilize the bias current, microwave radiation was injected to the HEB mixer. The injected power level was set by a proportional-integral-derivative controller, which completely compensates for the bias current oscillations induced by the pulse-tube cryocooler. Significant improvement in the Allan variance of the receiver output power was obtained, and an Allan time of 5 s was measured.
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Ryabchun, S., Tong, C. - Y. E., Blundell, R., Kimberk, R., & Gol'tsman, G. (2007). Study of the effect of microwave radiation on the operation of HEB mixers in the terahertz frequency range. IEEE Trans. Appl. Supercond., 17(2), 391–394.
Abstract: We have investigated the effect of injecting microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the hot-electron bolometer mixer incorporated into a THz heterodyne receiver. More specifically, we show that exposing the mixer to microwave radiation does not cause a significant rise of the receiver noise temperature and fall of the mixer conversion gain so long as the microwave power is a small fraction of local oscillator power. The injection of a small, but controlled amount of microwave power therefore enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the gain stability of hot electron bolometer mixer receivers.
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Ryabchun, S., Tong, C. -yu E., Blundell, R., Kimberk, R., & Gol’tsman, G. (2006). Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers. In M. Anwar, A. J. DeMaria, & M. S. Shur (Eds.), Proc. SPIE (Vol. 6373, 63730J (1 to 5)). SPIE.
Abstract: We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers.
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Loudkov, D., Tong, C. - Y. E., Blundell, R., Kaurova, N., Grishina, E., Voronov, B., et al. (2005). An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance. IEEE Trans. Appl. Supercond., 15(2), 472–475.
Abstract: We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount.
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Loudkov, D., Tong, C. - Y. E., Blundell, R., Kaurova, N., Grishina, E., Voronov, B., et al. (2005). An investigation of the performance of the waveguide superconducting HEB mixer at different RF embedding impedances. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 226–229).
Abstract: We have conducted an investigation of the performance of superconducting hot-electron bolometric (HEB) mixer at 800 GHz as a function of the embedding impedance of the waveguide embedding circuit. Using a single half-height mixer block, we have developed three different mixer chip configurations, offering nominal embedding resistances of 70, 35, and 15 Ohms. Both the High Frequency Structure Simulator (HFSS) software and scaled model impedance measurements were employed in the design process. Two batches of HEB mixers were fabricated to these designs using 3-4 nm thick NbN thin film. The mixers were characterized through receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans. Briefly, a minimum receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer of normal state resistance 62 Ohms incorporated into a circuit offering a nominal embedding impedance of 70 Ohms. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to that of the embedding impedance of the mixer mount.
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Loudkov, D., Tong, C. - Y. E., Marrone, D. P., Ryabchun, S., Paine, S. N., & Blundell, R. (2005). Transmission measurements of infrared filters for low-noise terahertz receiver applications. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 354–357).
Abstract: Infrared (IR) filters are very important to the efficient operation of cryogenic receivers. Usually, such filters are mounted on the radiation shield of the cryostat to reduce the heat load to the 4 K stage. Insufficient filtering may cause the temperature of the mixing element in a receiver to be excessively warm, leading to degradation in sensitivity. These filters should be effective in blocking the room temperature IR radiation from outside the cryostat, yet should be transparent across the desired signal frequency band. In the Terahertz frequency range, which is close to the infrared, it is difficult to find an inexpensive low- loss material that can provide the required IR blocking capacity. We present transmission measurements, made using a Fourier Transform Spectrometer (FTS), of a number of potential infrared filters between 0.4 and 1.6 THz. The filters tested include the widely-used, Teflon-based, Zitex-A and Zitex-G films, alkali halide based infrared filter, and crystalline quartz coated with Parylene, and polyethylene films.
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