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Cherednichenko, S.; Kroug, M.; Yagoubov, P.; Merkel, H.; Kollberg, E.; Yngvesson, K. S.; Voronov, B.; Gol’tsman, G. |
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IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates |
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Conference Article |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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219-227 |
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NbN HEB mixers, cinversion gain bandwidth, IF bandwidth |
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An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz. |
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1557 |
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Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN |
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1999 |
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Proc. SPIE |
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Proc. SPIE |
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3795 |
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357-368 |
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NbN HEB mixers |
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We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible. |
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SPIE |
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Hwu, R.J.; Wu, K. |
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Terahertz and Gigahertz Photonics |
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1561 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4217-4220 |
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NbN HEB mixers |
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NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region. |
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1051-8223 |
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1568 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3757-3760 |
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NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1051-8223 |
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1569 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Improved characteristics of NbN HEB mixers integrated with log-periodic antennas |
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Conference Article |
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1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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200-207 |
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NbN HEB mixers |
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1574 |
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