| Records |
| Author |
Корнеева, Ю. П.; Флоря, И. Н.; Корнеев, А. А.; Гольцман, Г. Н. |
| Title |
Cверхпроводящий однофотонный детектор для дальнего ИК диапазона длин волн |
Type |
Conference Article |
| Year |
2010 |
Publication |
Науч. сессия НИЯУ МИФИ |
Abbreviated Journal |
Науч. сессия НИЯУ МИФИ |
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Issue |
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Pages |
46-47 |
| Keywords |
SSPD |
| Abstract |
Мы представляем быстродействующий сверхпроводниковый однофотонный детектор (SSPD) для дальнего инфракрасного диапазона на основе ультратонкой монокристаллической пленки NbN толщиной 3 нм, состоящий из параллельных полосок. QE на длине волны 1,5.μм и 1,3 μм для предложенного SSPD практически одинаковы. SSPD показывает отклик длительностью 200 пс, что открывает путь к детекторам, обладающим скоростью счета свыше 1 ГГц. |
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978-5-7262-1227-2 |
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УДК 533.14(06)+004.056(06) Фотоника и информационная оптика |
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1144 |
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| Author |
Флоря, И. Н. |
| Title |
Ультрабыстрый однофотонный детектор для оптических применений |
Type |
Conference Article |
| Year |
2009 |
Publication |
Науч. сессия МИФИ |
Abbreviated Journal |
Науч. сессия МИФИ |
| Volume |
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Issue |
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Pages |
45-46 |
| Keywords |
SSPD |
| Abstract |
Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему. |
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978-5-7262-1042-1 |
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УДК 533.14(06)+004.056(06) Фотоника и информационная оптика |
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1145 |
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Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
| Title |
Resonant terahertz detection using graphene plasmons |
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Journal Article |
| Year |
2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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9 |
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Pages |
5392 (1 to 8) |
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THz, graphene plasmons |
| Abstract |
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
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Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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no |
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1148 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Journal Article |
| Year |
2019 |
Publication |
Phys. Status Solidi RRL |
Abbreviated Journal |
Phys. Status Solidi RRL |
| Volume |
13 |
Issue |
9 |
Pages |
1900187-(1-6) |
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For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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no |
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1149 |
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| Author |
Семенов, Александр Владимирович |
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Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников |
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Manuscript |
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2010 |
Publication |
М. МПГУ |
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SSPD, SNSPD, response |
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Ph.D. thesis |
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Russian |
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1150 |
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