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Meledin D.; Pantaleev M.; Pavolotsky A.; Risacher C.; Robles V.A.P.; Belitsky V.; Drakinskiy V.; Cherednichenko S. |
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Design of a balanced waveguide HEB mixer for APEX 1.32 THz receiver |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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211-217 |
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The prototype of a waveguide balanced Hot Electron Bolometer (HEB) Terahertz mixer is designed as a part of development for the APEX Project of Band T2 receiver for 1250-1390 GHz. The proposed mixer employs balanced scheme with two identical HEB devices. These individual mixers would be placed on two separate crystalline quartz substrates with dimensions of 1000μm x67μm x17 μm each with integrated RF choke filters, DC-bias and IF circuitry. A 3 dB quadrature waveguide directional coupler is needed to provide local oscillator (LO) injection and RF signal distribution between the two HEB mixers. We have designed the coupler to achieve the required frequency band, low insertion loss and symmetrical division of the RF and LO power within the band of interest. Initial design of HEB mixer layout is developed based on a previous development for a 345 GHz sideband separation mixer. We present also results of development of microfabrication technology of the waveguide hybrid employing micromachining approach combined with electroplating technique. |
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RPLAB @ atomics90 @ |
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972 |
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Belitsky, V.; Desmaris, V.; Dochev, D.; Meledin, D.; Pavolotsky, A. |
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Title |
Towards Multi-Pixel Heterodyne Terahertz Receivers |
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2011 |
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Proc. 22th Int. Symp. Space Terahertz Technol. |
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Terahertz multi-pixel heterodyne receivers introduce multiple challenges for their implementation, mostly due to the extremely small dimensions of all components and even smaller tolerances in terms of alignment, linear dimensions and waveguide component surface quality. In this manuscript, we present a concept of terahertz multi-pixel heterodyne receiver employing optical layout using polarization split between the LO and RF. The frontend isbased on a waveguide balanced HEB mixer for the frequency band 1.6 – 2.0 THz. The balanced HEB mixer followsthe layout of earlier demonstrated APEX T2 mixer. However for the mixer presented here, we implemented split-block layout offering inimized lengths of all waveguides and thus reducing the associated RF loss. The micromachining methods employed for producing the mixer housing and the HEB mixer chip are very suitable for producing multiple structures and hence are in-line with requirements of multi-pixel receiver technology. The demonstrated relatively simple mounting of the mixer chip with self-aligning should greatly facilitate the integration of such multi-channel receiver. Index Terms—Instrumentation, Multi-pixel, Terahertz, Waveguide Balanced Mixer. |
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RPLAB @ atomics90 @ |
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975 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
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Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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495-498 |
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HEB mixer distributed model, HEB distributed model, distributed HEB model |
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Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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980 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
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1984 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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59 |
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2 |
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442-450 |
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Nb HEB |
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The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
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RPLAB @ phisix @ |
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983 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Character of submillimeter photoconductivity in n-lnSb |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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