Smirnov, A. V., Larionov, P. A., Finkel, M. I., Maslennikov, S. N., Voronov, B. M., & Gol'tsman, G. N. (2008). NbZr films for THz phonon-cooled HEB mixers. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 44–47). Groningen, Netherlands.
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Cao, A., Jiang, L., Chen, S. H., Antipov, S. V., & Shi, S. C. (2007). IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer. In Proc. International conference on microwave and millimeter wave technology (pp. 1–3). Builin.
Abstract: In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Papa, D. C., Hunter, T. R., Gol'tsman, G., et al. (1998). First light with an 800 GHz phonon-cooled HEB mixer receiver. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 35–43). Pasadena, California, USA.
Abstract: Phonon-cooled superconductive hot-electron bolometric (HEB) mixers are incorporated in a waveguide receiver designed to operate near 800 Gliz. The mixer elements are thin-film nio- bium nitride microbridges with dimensions of 4 nm thickness, 0.2 to 0.3 p.m in length and 2 jun in width. At 780 GHz the best receiver noise temperature is 840 K (DSB). The mixer IF bandwidth is 2.0 GHz, the absorbed LO power is —0.1 1.1W. A fixed-tuned version of the re- ceiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, Arizona, to conduct astronomical observations. These observations represent the first time that a receiver incorporating any superconducting HEB mixer has been used to detect a spectral line of celes- tial origin.
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Cherednichenko, S., Drakinskiy, V., Baubert, J., Lecomte, B., Dauplay, F., Krieg, J. M., et al. (2006). 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In Proc. SPIE (Vol. 6275, 62750I (1 to 11)).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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Goltsman, G. N., Vachtomin, Y. B., Antipov, S. V., Finkel, M. I., Maslennikov, S. N., Polyakov, S. L., et al. (2005). Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers. In Proc. 9-th WMSCI (Vol. 9, pp. 154–159). International Institute of Informatics and Systemics.
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Масленников, С. Н. (2007). Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов. Ph.D. thesis, , .
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Корнеев, А. А. (2006). Квантовая эффективность и темновой счет NbN сверхпроводникового инфракрасного однофотонного детектора. Ph.D. thesis, , .
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Papa, D. C., Hunter, T. R., Paine, St. N., et al. (2000). Superconductive hot-electron bolometer mixer receiver for 800 GHz operation (Vol. 48).
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Ryabchun, S. A., Tretyakov, I. V., Finkel, M. I., Maslennikov, S. N., Kaurova, N. S., Seleznev, V. A., et al. (2008). Fabrication and characterisation of NbN HEB mixers with in situ gold contacts. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 62–67). Groningen, Netherlands.
Abstract: We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts.
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Smirnov, K., Korneev, A., Minaeva, O., Divochiy, A., Tarkhov, M., Ryabchun, S., et al. (2007). Ultrathin NbN film superconducting single-photon detector array. In J. Phys.: Conf. Ser. (Vol. 61, pp. 1081–1085).
Abstract: We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes.
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