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Author | Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. | ||||
Title | Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity | Type | Journal Article | ||
Year | 2014 | Publication | Laser Phys. Lett. | Abbreviated Journal | |
Volume | 11 | Issue | 1 | Pages | 015004 (1 to 4) |
Keywords | HEB applications, HEB detector applications, short THz pulses detection | ||||
Abstract | We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. | ||||
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Call Number | Serial | 1076 | |||
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Author | Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P. | ||||
Title | Fully integrated quantum photonic circuit with an electrically driven light source | Type | Journal Article | ||
Year | 2016 | Publication | Nat. Photon. | Abbreviated Journal | Nat. Photon. |
Volume | 10 | Issue | 11 | Pages | 727-732 |
Keywords | Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector | ||||
Abstract | Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1105 | ||
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Author | Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
Title | Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
Volume | 27 | Issue | 4 | Pages | 5 |
Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
Abstract | In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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Author | Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. | ||||
Title | Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions | Type | Journal Article | ||
Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 10 | Pages | ||
Keywords | terahertz electromagnetic radiation; superconductors; detectors of terahertz range | ||||
Abstract | A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. | ||||
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Notes | 7 pages | Approved | no | ||
Call Number | Serial | 1117 | |||
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Author | Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W. | ||||
Title | Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors | Type | Journal Article | ||
Year | 2017 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
Volume | 25 | Issue | 8 | Pages | 8739-8750 |
Keywords | SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics | ||||
Abstract | We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions. | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1118 | ||
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Author | Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. | ||||
Title | Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits | Type | Journal Article | ||
Year | 2017 | Publication | Optica | Abbreviated Journal | Optica |
Volume | 4 | Issue | 5 | Pages | 557-562 |
Keywords | Waveguide integrated superconducting single-photon detectors; Nanophotonics and photonic crystals; Quantum detectors; Spectrometers and spectroscopic instrumentation | ||||
Abstract | The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip. | ||||
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Call Number | RPLAB @ kovalyuk @ | Serial | 1119 | ||
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Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
Volume | 10 | Issue | 5 | Pages | 1-12 |
Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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Language | English | Summary Language | Original Title | ||
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ISSN | 2079-4991 | ISBN | Medium | ||
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Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
Call Number | Serial | 1151 | |||
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Author | Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
Title | Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector | Type | Conference Article | ||
Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 1695 | Issue | Pages | 012156 | |
Keywords | Shottky diode, THz, direct detector, multipixel camera | ||||
Abstract | In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. | ||||
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ISSN | 1742-6588 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1153 | |||
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Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
Title | Silicon room temperature IR detectors coated with Ag2S quantum dots | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 369-371 | ||
Keywords | silicon detector, quantum dot, IR, surface states | ||||
Abstract | For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. | ||||
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ISSN | ISBN | 978-5-89513-451-1 | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1154 | |||
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Author | Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory | ||||
Title | Performance of an HEB direct detector utilizing a microwave reflection readout scheme | Type | Conference Article | ||
Year | 2015 | Publication | Proc. 26th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 26th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 36 | ||
Keywords | HEB detector | ||||
Abstract | We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. | ||||
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Call Number | Serial | 1158 | |||
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