| Records |
| Author |
Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. |
| Title |
Superconductive NbN hot-electron bolometric mixer performance at 250 GHz |
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Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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331-336 |
| Keywords |
NbN HEB mixers |
| Abstract |
Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity. |
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945 |
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Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
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Receiver noise temperature, the quantum noise limit, and the role of the zero-point fluctuations |
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Journal Article |
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1996 |
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Electronics division internal report NO. 304 |
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1-10 |
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RPLAB @ atomics90 @ |
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947 |
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| Author |
Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
| Title |
A microwave reflection readout scheme for hot electron bolometric direct detector |
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Journal Article |
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2015 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
5 |
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81-84 |
| Keywords |
HEB detectors |
| Abstract |
In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
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950 |
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Meledin D.; Desmaris V.; Ferm S.-E.; Fredrixon M.; Henke D.; Lapkin I.; Nyström O.; Pantaleev M.; Pavolotsky A.; Strandberg M.; Sundin E.; Belitsky V. |
| Title |
APEX Band T2: A 1.25 – 1.39 THz Waveguide Balanced HEB Receiver |
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2008 |
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181-185 |
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A waveguide 1.25–1.39 THz Hot Electron Bolometer (HEB) balanced receiver was successfully developed, characterized and installed at the Atacama Pathfinder EXperiment (APEX) telescope. The receiver employs a quadrature balanced scheme using a waveguide 90-degree 3 dB RF hybrid, HEB mixers and a 180-degree IF hybrid. The HEB mixers are based on ultrathin NbN film deposited on crystalline quartz with a MgO buffer layer. Integrated into the multi-channel APEX facility receiver (SHeFI), the results presented here demonstrate exceptional performance; a receiver noise temperature of 1000 K measured at the telescope at the center of the receiver IF band 2-4 GHz, and at an LO frequency of 1294 GHz. Stability of the receiver is fully in line with the SIS mixer bands of the SHeFI, and gives a spectroscopic Allan time of more than 200 s with a noise bandwidth of 1 MHz. |
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RPLAB @ atomics90 @ |
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974 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
| Title |
Character of submillimeter photoconductivity in n-lnSb |
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Journal Article |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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