Florya, I. N., Korneeva, Y. P., Sidorova, M. V., Golikov, A. D., Gaiduchenko, I. A., Fedorov, G. E., et al. (2015). Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In EPJ Web of Conferences (Vol. 103, 10004 (1 to 2)).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
|
Fedorov, G. E., Gaiduchenko, I. A., Golikov, A. D., Rybin, M. G., Obraztsova, E. D., Voronov, B. M., et al. (2015). Response of graphene based gated nanodevices exposed to THz radiation. In EPJ Web of Conferences (Vol. 103, 10003 (1 to 2)).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
|
Korneev, A., Kovalyuk, V., Ferrari, S., Kahl, O., Pernice, W., An, P., et al. (2017). Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits. In 16th ISEC (pp. 1–3).
Abstract: We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.
|
Korneev, A., Kovalyuk, V., An, P., Golikov, A., Zubkova, E., Ferrari, S., et al. (2018). Superconducting single-photon detector for integrated waveguide spectrometer. In EPJ Web Conf. (Vol. 190, 04009).
Abstract: We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
|
Prokhodtsov, A., An, P., Kovalyuk, V., Zubkova, E., Golikov, A., Korneev, A., et al. (2018). Optimization of on-chip photonic delay lines for telecom wavelengths. In J. Phys.: Conf. Ser. (Vol. 1124, 051052).
Abstract: In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
|
Smirnov, E., Golikov, A., Zolotov, P., Kovalyuk, V., Lobino, M., Voronov, B., et al. (2018). Superconducting nanowire single-photon detector on lithium niobate. In J. Phys.: Conf. Ser. (Vol. 1124, 051025).
Abstract: We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s−1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
|
Golikov, A., Kovalyuk, V., An, P., Zubkova, E., Ferrari, S., Pernice, W., et al. (2018). Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051051).
Abstract: Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.
|
An, P., Kovalyuk, V., Golikov, A., Zubkova, E., Ferrari, S., Korneev, A., et al. (2018). Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051047).
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
|
Elmanova, A., Elmanov, I., Komrakova, S., Golikov, A., Javadzade, J., Vorobyev, V., et al. (2019). Integration of nanodiamonds with NV-centers on optical silicon nitride structures. In EPJ Web Conf. (Vol. 220, 03013).
Abstract: In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
|
Elmanov, I., Elmanova, A., Komrakova, S., Golikov, A., Kaurova, N., Kovalyuk, V., et al. (2019). Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform. In EPJ Web Conf. (Vol. 220, 03012).
Abstract: In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
|
