Records |
Author |
Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G. |
Title |
Superconducting photon number resolving counter for near infrared applications |
Type |
Conference Article |
Year |
2008 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
7138 |
Issue |
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Pages |
713828 (1 to 5) |
Keywords |
PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared |
Abstract |
We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate. |
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Publisher |
Spie |
Place of Publication |
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Editor |
Tománek, P.; Senderáková, D.; Hrabovský, M. |
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Call Number |
10.1117/12.818079 |
Serial |
1241 |
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Author |
Minaeva, O.; Fraine, A.; Korneev, A.; Divochiy, A.; Goltsman, G.; Sergienko, A. |
Title |
High resolution optical time-domain reflectometry using superconducting single-photon detectors |
Type |
Conference Article |
Year |
2012 |
Publication |
Frontiers in Opt. 2012/Laser Sci. XXVIII |
Abbreviated Journal |
Frontiers in Opt. 2012/Laser Sci. XXVIII |
Volume |
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Issue |
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Pages |
Fw3a.39 |
Keywords |
SSPD, SNSPD, Photodetectors; Fiber characterization; Light beams; Optical time domain reflectometry; Photon counting; Single mode fibers; Single photon detectors; Superconductors |
Abstract |
We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs. |
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Publisher |
Optical Society of America |
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no |
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Serial |
1237 |
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Author |
Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N. |
Title |
Superconducting detector for visible and near-infrared quantum emitters [Invited] |
Type |
Journal Article |
Year |
2017 |
Publication |
Opt. Mater. Express |
Abbreviated Journal |
Opt. Mater. Express |
Volume |
7 |
Issue |
2 |
Pages |
513-526 |
Keywords |
SSPD, SNSPD |
Abstract |
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial. |
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Edition |
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ISSN |
2159-3930 |
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Serial |
1234 |
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Author |
Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
Title |
Thermal properties of NbN single-photon detectors |
Type |
Journal Article |
Year |
2018 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
Volume |
10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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ISSN |
2331-7019 |
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no |
Call Number |
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Serial |
1226 |
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Author |
Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. |
Title |
A comparison of VN and NbN thin films towards optimal SNSPD efficiency |
Type |
Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
31 |
Issue |
5 |
Pages |
1-4 |
Keywords |
NbN SSPD, SNSPD, WSi |
Abstract |
Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. |
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Edition |
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ISSN |
1051-8223 |
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no |
Call Number |
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Serial |
1223 |
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