Dedes, C., Röllig, M., Mookerjea, B., Okada, Y., Ossenkopf, V., Bruderer, S., et al. (2010). The origin of the [C II] emission in the S140 photon-dominated regions. New insights from HIFI. Astron. Astrophys., 521, L24.
Abstract: Using Herschel's HIFI instrument, we observe C ii along a cut through S140, as well as high-J transitions of CO and HCO+ at two positions on the cut, corresponding to the externally irradiated ionization front and the embedded massive star-forming core IRS1. The HIFI data were combined with available ground-based observations and modeled using the KOSMA-Ï„ model for photon-dominated regions (PDRs). We derive the physical conditions in S140 and in particular the origin of C ii emission around IRS1. We identify three distinct regions of C ii emission from the cut, one close to the embedded source IRS1, one associated with the ionization front, and one further into the cloud. The line emission can be understood in terms of a clumpy model of PDRs. At the position of IRS1, we identify at least two distinct components contributing to the [C ii] emission, one of them a small, hot component, which can possibly be identified with the irradiated outflow walls. This is consistent with the C ii peak at IRS1 coinciding with shocked H2 emission at the edges of the outflow cavity. We note that previously available observations of IRS1 can be reproduced well by a single-component KOSMA-Ï„ model. Thus, it is HIFI's unprecedented spatial and spectral resolution, as well as its sensitivity that has allowed us to uncover an additional hot gas component in the S140 region.
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Larrey, V., Villegier, J. - C., Salez, M., Miletto-Granozio, F., & Karpov, A. (1999). Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ. IEEE Trans. Appl. Supercond., 9(2), 3216–3219.
Abstract: A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
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