Hu, X., Zhong, T., White, J. E., Dauler, E. A. N., Faraz, Herder, C. H., Wong, F. N. C., et al. (2009). Fiber-coupled nanowire photon counter at 1550 nm with 24% system detection efficiency. Opt. Lett., 34(23), 3607–3609.
Abstract: We developed a fiber-coupled superconducting nanowire single-photon detector system in a close-cycled cryocooler and achieved 24% and 22% system detection efficiencies at wavelengths of 1550 and 1315 nm, respectively. The maximum dark count rate was ~1000 counts/s.
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Kerman, A. J., Yang, J. K. W., Molnar, R. J., Dauler, E. A., & Berggren, K. K. (2009). Electrothermal feedback in superconducting nanowire single-photon detectors. Phys. Rev. B, 79(10), 4.
Abstract: We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect and a simple model which quantitatively explains the results.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Bonifas, A. P., & McCreery, R. L. (2010). ‘Soft’ Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition. Nat. Nanotech., 5(8), 612–617.
Abstract: Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function.
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Freer, E. M., Grachev, O., Duan, X., Martin, S., & Stumbo, D. P. (2010). High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat. Nanotech., 5(7), 525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
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