Records |
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
Type |
Journal Article |
Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
45 |
Issue |
3 |
Pages |
555-565 |
Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
Abstract |
The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
Type |
Journal Article |
Year |
1977 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
Volume |
11 |
Issue |
12 |
Pages |
2373-2375 |
Keywords |
InSb, energy spectrum, donors, high magnetic field |
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Russian |
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Воздействие сильного магнитного поля на спектр доноров в InSb |
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1729 |
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