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Author | Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
Volume | 7 | Issue | 10 | Pages | 1248-1250 |
Keywords | GaAs, excited donor states | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1733 | |||
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