|
|
Semenov, A., Goltsman, G., & Korneev, A. (2001). Quantum detection by current carrying superconducting film. Phys. C: Supercond., 351(4), 349–356.
Abstract: We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism.
|
|
|
|
Koshelets, V. P., Ermakov, A. B., Filippenko, L. V., Koryukin, O. V., Khudchenko, A. V., Sobolev, A. S., et al. (2006). Superconducting submm integrated receiver for TELIS. In J. Phys.: Conf. Ser. (Vol. 43, pp. 1377–1380).
|
|
|
|
Yagoubov, P., Hoogeveen, R., Torgashin, M., Khudchenko, A., Koshelets, V., Suttiwong, N., et al. (2006). 550-650 GHz spectrometer development for TELIS. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 338–341).
|
|
|
|
Murk, A., Kämpfer, N., Wylde, R., Inatani, J., Manabe, T., & Seta, M. (2001). Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 426–435).
|
|
|
|
Finkel, M., Vachtomin, Y., Antipov, S., Drakinski, V., Kaurova, N., Voronov, B., et al. (2003). Gain bandwidth and noise temperature of NbTiN HEB mixer. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 276–285).
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
|
|
