Loudkov, D., Tong, C. - Y. E., Blundell, R., Kaurova, N., Grishina, E., Voronov, B., et al. (2005). An investigation of the performance of the waveguide superconducting HEB mixer at different RF embedding impedances. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 226–229).
Abstract: We have conducted an investigation of the performance of superconducting hot-electron bolometric (HEB) mixer at 800 GHz as a function of the embedding impedance of the waveguide embedding circuit. Using a single half-height mixer block, we have developed three different mixer chip configurations, offering nominal embedding resistances of 70, 35, and 15 Ohms. Both the High Frequency Structure Simulator (HFSS) software and scaled model impedance measurements were employed in the design process. Two batches of HEB mixers were fabricated to these designs using 3-4 nm thick NbN thin film. The mixers were characterized through receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans. Briefly, a minimum receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer of normal state resistance 62 Ohms incorporated into a circuit offering a nominal embedding impedance of 70 Ohms. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to that of the embedding impedance of the mixer mount.
|
Baryshev, A., Baselmans, J. J. A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in hot electron bolometer mixers. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 463–464).
Abstract: NbN phonon cooled hot electron bolometer (HEB) mixers are currently the most sensitive heterodyne detectors at frequencies above 1.2 THz. They combine a good sensitivity (8-15 times the quantum limit), an IF bandwidth of the order of 4-6 GHz and a wide RF bandwidth from 0.7-5.2 THz. However, for use in a space based observatory, such as Herschel, it is of vital importance that the Local Oscillator (LO) power requirement of the mixer is compatible with the low output power of present day THz LO sources. This can be achieved by reducing the mixer volume and critical current. However, the large RF bandwidth and low LO power requirement of such a mixer result in a direct detection effect, characterized by a change in the bias current of the HEB when changing the RF signal from a black body load at 300 K to one at 77 K. As a result the measured sensitivity using a 300 K and 77 K calibration load differs significantly from the small signal sensitivity relevant for astronomical observations. In this article we describe a set of dedicated experiments to characterize the direct detection effect for a small volume quasi-optical NbN phonon cooled HEB mixer. We measure the direct detection effect in a small volume (0.15 μm · 1 μm · 3.5 nm) quasi- optical NbN phonon cooled HEB mixer at 1.6 THz. We found that the small signal sensitivity of the receiver is underestimated by approximately 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300 K and 77 K. Using a 200 GHz wide band-pass filter at the 4.2 K the direct detection effect virtually disappears. Heterodyne response measurements using water vapor absorption line in a gas cell confirms the existence and a magnitude of a direct detection effect. We also propose a theoretical explanation using uniform electron heating model. This direct detection effect has important implications for the calibration procedure of these receivers in real telescope systems. We are developing Nb HEBs for a large-format, diffusion-cooled hot electron bolometer (HEB) array submillimeter camera. The goal is to produce a 64 pixel array together with the University of Arizona to be used on the HHT on Mt Graham. It is designed to detect in the 850 GHz atmospheric window. We have fabricated Nb HEBs using a new angle- deposition process, which had previously produced high quality Nb-Au bilayer HEB devices at Yale. [1] We have characterized these devices using heterodyne mixing at ~30 GHz to compare to 345 GHz tests at the University of Arizona. We can also directly compare our Nb HEB mixers to SIS mixers in this same 345 GHz system. This allows us to rigorously calibrate the system’s losses and extract the mixer noise temperature in a well characterized mixer block, before undertaking the 850 GHz system. Here we give a report on the initial devices we have fabricated and characterized. * Department of Applied Physics, Yale University ** Department of Astronomy, University of Arizona [1] Applied Physics Letters 84, Number 8; p.1404-7, Feb 23 (2004)
|
Gol'tsman, G., Korneev, A., Minaeva, O., Rubtsova, I., Milostnaya, I., Chulkova, G., et al. (2005). Superconducting nanostructured detectors capable of single-photon counting in the THz range. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 555–557).
Abstract: We present the results of the NbN superconducting single-photon detector sensitivity measurement in the visible to mid-IR range. For visible and near IR light (0.56 — 1.3μm wavelengths) the detector exhibits 30% quantum efficiency saturation value limited by the NbN film absorption and extremely low level of dark counts (2x10 -4 s -1). The detector manifested single-photon counting up to 6 μm wavelength with the quantum efficiency reaching 10 -2 % at 5.6 μm and 3 K temperature.
|
Goltsman, G., Korneev, A., Minaeva, O., Rubtsova, I., Chulkova, G., Milostnaya, I., et al. (2005). Advanced nanostructured optical NbN single-photon detector operated at 2.0 K. In M. Razeghi, & G. J. Brown (Eds.), Proc. SPIE (Vol. 5732, pp. 520–529). Spie.
Abstract: We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
|
Gol'tsman, G. N., Korneev, A., Rubtsova, I., Milostnaya, I., Chulkova, G., Minaeva, O., et al. (2005). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. Phys. Stat. Sol. (C), 2(5), 1480–1488.
Abstract: We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range.
|
