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Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. |
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Title |
A microwave-operated hot-electron-bolometric power detector for terahertz radiation |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300604 (1 to 4) |
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NbN HEB mixer |
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A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW. |
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1558-2515 |
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1354 |
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Murphy, A.; Semenov, A.; Korneev, A.; Korneeva, Y.; Gol’tsman, G.; Bezryadin, A. |
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Dark counts initiated by macroscopic quantum tunneling in NbN superconducting photon detectors |
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Miscellaneous |
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2014 |
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arXiv |
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NbN SSPD |
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We perform measurements of the switching current distributions of three w = 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. |
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murphy2014dark |
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1356 |
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Baselmans, J. J. A.; de Visser, P. J.; Yates, S. J. C.; Bueno, J.; Jansen, R. M. J.; Endo, A.; Thoen, D. J.; Baryshev, A. M.; Ferrari, L.; Klapwijk, T. M. |
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Large format, background limited arrays of kinetic inductance detectors for sub-mm astronomy |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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64 |
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KID |
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Kinetic Inductance detectors have held a promise for the last decade to enable very large arrays, in excess of 10.000 pixels, with background limited sensitivity for ground- and Space Based sub-mm observatories. First we present the development of the detector chips of the A-MKID instrument: These chips contain up to 5400 detector pixel divided over up to 5 readout lines for the 350 GHz and 850 GHz atmospheric windows. The individual detectors are lens antenna coupled KIDs made of NbTiN and Aluminium that reach photon noise limited sensitivity at sky loading levels in excess of a few fW per pixel using either phase readout or amplitude readout. The ability to use phase readout is crucial as it reduces the requirements on the readout electronics of the instrument. Cross coupling between the KID resonators was mitigated by a combination of numerical simulations and a suitable position encoding of the readout resonance frequencies of the individual pixels. Beam pattern measurements are performed to demonstrate the absence of any cross talk due to resonator- resonator cross coupling. Second we present experiments on individual lens-antenna coupled detectors at 1.5 THz that are made out of aluminium. With these devices we have observed, as a function of the irradiated power at 1.5 THz, the crossover from photon noise limited performance to detector-limited performance at loading powers less than 0.1 fW. In the latter limit the device is limited by intrinsic fluctuations in the Cooper pair and quasiparticle number, i.e. Generation-Recombination noise. This results in a sensitivity corresponding to a NEP = 3.8·10 -19 W/√(Hz). |
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1360 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
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Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
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Abstract |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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71 |
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carbon nanotubes, CNT |
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This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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1361 |
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Tretyakov, Ivan; Seliverstov, Sergey; Zolotov, Philipp; Kaurova, Natalya; Voronov, Boris; Finkel, Matvey; Goltsman, Gregory |
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Noise temperature and noise bandwidth of hot-electron bolometer mixer at 3.8 THz |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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77 |
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NbN HEB mixer |
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We report on our recent results of double sideband (DSB) noise temperature and bandwidth measurements of quasi-optical hot electron bolometer (HEB) mixers at local oscillator frequency of 3.8 THz. The HEB mixers used in this work were made of a NbN thin film and had a superconducting transition temperature of about 10.3 K. To couple terahertz radiation, the NbN microbridge (0.2 μm long and 2 μm wide) was integrated with a planar logarithmic-spiral antenna. The mixer chip was glued to an elliptical Si lens clamped tightly to a mixer block mounted on the 4.2 K plate of a liquid helium cryostat. The terahertz radiation was fed into the HEB device through the cryostat window made of a 0.5 mm thick HDPE. A band-pass mesh filter was mounted on the 4.2 K plate to minimize the direct detection effect [1]. We used a gas discharge laser irradiating at 3.8 THz H 2 0 line as a local oscillator (LO). The LO power was combined with a black body broadband radiation via Mylar beam splitter. Our receiver allows heterodyne detection with an intermediate frequency (IF) of a several gigahertz which dictates usage of a wideband SiGe low noise amplifier [2]. The receiver IF output signal was further amplified at room temperature and fed into a square-law power detector through a band-pass filter. The DSB receiver noise temperature was measured using a conventional Y-factor technique at IF of 1.25 GHz and band of 40 MHz. Using wideband amplifiers at both cryogenic and room temperature stages we have estimated IF bandwidth of the HEB mixers used. The obtained results strengthen the position of the HEB mixer as one of the most important tools for submillimeter astronomy. This device operates well above the energy gap (at frequencies above 1 THz) where performance of state-of-the-art SIS mixers starts to degrade. So, HEB mixers are expected to be a device of choice in astrophysical observations (ground-, aircraft- and space-based) at THz frequencies due to its excellent noise performance and low LO power requirements. The HEB mixers will be in operation on Millimetron Space Observatory. References 1. J. J. A. Baselmans, A. Baryshev, S. F. Reker, M. Hajenius, J. R. Gao, T. M. Klapwijk, Yu. Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman, Appl. Phys. Lett., 86, 163503 (2005). 2. Sander Weinreb, Life Fellow, IEEE, Joseph C. Bardin, Student Member, IEEE, and Hamdi Mani, “Design of Cryogenic SiGe Low-Noise Amplifiers”, IEEE Transactions on Microwave Theory and Techniques, 55, 11, 2007. |
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