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Author |
Polyakov, Sergey V.; Migdalla, Alan L. |
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Quantum radiometry |
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Journal Article |
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2009 |
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J. Modern Opt. |
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56 |
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9 |
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1045-1052 |
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We review radiometric techniques that take advantage of photon counting and stem from the quantum laws of nature. We present a brief history of metrological experiments and review the current state of experimental quantum radiometry. |
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RPLAB @ gujma @ |
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671 |
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Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M. |
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Title |
CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument |
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Journal Article |
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2009 |
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SPICA |
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SPICA |
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SPICA Workshop 2009 |
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detectors; Infrared |
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We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors. |
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RPLAB @ gujma @ |
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672 |
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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
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Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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Journal Article |
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2009 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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95 |
Issue |
19 |
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3 |
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2DEG |
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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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RPLAB @ gujma @ |
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673 |
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Братман, В.Л.; Литвак, А.Г.; Суворов, Е.В. |
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Title |
Освоение терагерцевого диапазона: источники и приложения |
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Journal Article |
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2010 |
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Успехи физических наук |
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Успехи физ. наук |
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181 |
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8 |
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867–874 |
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HEB |
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674 |
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Driessen, Eduard Frans Clemens |
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Title |
Coupling light to periodic nanostructures |
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Journal Article |
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2009 |
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Faculty of Science, Leiden University |
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Fac. Scien., Leiden Un. |
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144 |
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SSPD |
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Issue Date: 2009-09-24 |
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RPLAB @ gujma @ |
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675 |
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