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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Title |
Character of submillimeter photoconductivity in n-lnSb |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
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Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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Journal Article |
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1995 |
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JETP |
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JETP |
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80 |
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5 |
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960-964 |
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The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
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Generation of nanosecond terahertz pulses by the optical rectification method |
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2012 |
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JETP Lett. |
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JETP Lett. |
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96 |
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2 |
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94-97 |
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optical rectification, lithium niobate crystal |
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The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2. |
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0021-3640 |
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1377 |
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Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
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Title |
Universal bottleneck for thermal relaxation in disordered metallic films |
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2020 |
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JETP Lett. |
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Jetp Lett. |
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Volume |
111 |
Issue |
2 |
Pages |
104-108 |
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Keywords |
NbN disordered metallic films, thermal relaxation |
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We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. |
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0021-3640 |
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1164 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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74 |
Issue |
9 |
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474-479 |
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2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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